Автор: Giorgio Benedek Название: Point and Extended Defects in Semiconductors ISBN: 146845711X ISBN-13(EAN): 9781468457117 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Автор: J. Friedel; M. Lannoo Название: Point Defects in Semiconductors I ISBN: 3642815766 ISBN-13(EAN): 9783642815768 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Автор: Holt Название: Extended Defects in Semiconductors ISBN: 1107424143 ISBN-13(EAN): 9781107424142 Издательство: Cambridge Academ Рейтинг: Цена: 11405.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Автор: Gunnar Borstel; Andris Krumins; Donats Millers Название: Defects and Surface-Induced Effects in Advanced Perovskites ISBN: 0792362160 ISBN-13(EAN): 9780792362166 Издательство: Springer Рейтинг: Цена: 38992.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties. This title reports the developments and results and brings progress in high-tech technologies using perovskite materials.
Автор: Gunnar Borstel; Andris Krumins; Donats Millers Название: Defects and Surface-Induced Effects in Advanced Perovskites ISBN: 0792362179 ISBN-13(EAN): 9780792362173 Издательство: Springer Рейтинг: Цена: 20263.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties. This work presents 51 papers that report the developments and new results and can stimulate progress in high-tech technologies using perovskite materials.
Автор: Oleg D. Lavrentovich; Paolo Pasini; Claudio Zannon Название: Defects in Liquid Crystals: Computer Simulations, Theory and Experiments ISBN: 140200169X ISBN-13(EAN): 9781402001697 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop on Computer Simulations of Defects in Liquid Crystals Including their Relation to Theory and Experiment, held in Erice, Sicily, Italy, 19-23 September 2000
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: B.K. Tanner Название: Characterization of Crystal Growth Defects by X-Ray Methods ISBN: 147571128X ISBN-13(EAN): 9781475711288 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.
Автор: Cristian Teodosiu Название: Elastic Models of Crystal Defects ISBN: 354011226X ISBN-13(EAN): 9783540112266 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: for the computation of the elastic states of dislocation loops by means of straight dislocation data. Chapter III presents the main results obtained so far in describing non-linear effects in the elastic field of straight dislocations, as well as in the study of the core configuration of dislocations by using semidiscrete methods. Chapter IV is devoted to the linear and non-linear theory of continuous distri- butions of dislocations and to its application to investigating the influence of dislo- cations on crystal density and on the low-temperature thermal conductivity of crystals. Chapter V deals with the modelling of point defects as rigid or elastic inclusions l in an elastic matrix, or as force nultipoles. Finally, some of the results Q)ailable on the interactions between point defects and other crystal defects are briefly reviewed. Although the material in the text covers mainly the mathematical theory of crystal defects, the author has been constantly concerned with emphasizing the phYSical significance of the results and some of their possible applications. The reader can easily enlarge his information in these directions by reference to the stan- dard books on crystal defects by Cottrell {84J, Read {275J, Friedel 124J, Kroner 190J, van Bueren {365J, Indenbom {167J, Nabarro {258J, Hirth and Lathe 162J, or to the review articles by Seeger 286 J, Eshelby {Ill J, de Wit 385 J, and Bullough 50].
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