Elastic Models of Crystal Defects, Cristian Teodosiu
Автор: B.K. Tanner Название: Characterization of Crystal Growth Defects by X-Ray Methods ISBN: 147571128X ISBN-13(EAN): 9781475711288 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.
Описание: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals, and also on their kinetics and transformations under annealing.
Автор: Holt Название: Extended Defects in Semiconductors ISBN: 1107424143 ISBN-13(EAN): 9781107424142 Издательство: Cambridge Academ Рейтинг: Цена: 11405.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1849968209 ISBN-13(EAN): 9781849968201 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
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