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Elastic Models of Crystal Defects, Cristian Teodosiu


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Автор: Cristian Teodosiu
Название:  Elastic Models of Crystal Defects
ISBN: 9783540112266
Издательство: Springer
Классификация:

ISBN-10: 354011226X
Обложка/Формат: Paperback
Страницы: 336
Вес: 0.54 кг.
Дата издания: 01.03.1982
Язык: English
Размер: 244 x 170 x 18
Основная тема: Chemistry
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: for the computation of the elastic states of dislocation loops by means of straight dislocation data. Chapter III presents the main results obtained so far in describing non-linear effects in the elastic field of straight dislocations, as well as in the study of the core configuration of dislocations by using semidiscrete methods. Chapter IV is devoted to the linear and non-linear theory of continuous distri- butions of dislocations and to its application to investigating the influence of dislo- cations on crystal density and on the low-temperature thermal conductivity of crystals. Chapter V deals with the modelling of point defects as rigid or elastic inclusions l in an elastic matrix, or as force nultipoles. Finally, some of the results Q)ailable on the interactions between point defects and other crystal defects are briefly reviewed. Although the material in the text covers mainly the mathematical theory of crystal defects, the author has been constantly concerned with emphasizing the phYSical significance of the results and some of their possible applications. The reader can easily enlarge his information in these directions by reference to the stan- dard books on crystal defects by Cottrell {84J, Read {275J, Friedel 124J, Kroner 190J, van Bueren {365J, Indenbom {167J, Nabarro {258J, Hirth and Lathe 162J, or to the review articles by Seeger 286 J, Eshelby {Ill J, de Wit 385 J, and Bullough 50].


Characterization of Crystal Growth Defects by X-Ray Methods

Автор: B.K. Tanner
Название: Characterization of Crystal Growth Defects by X-Ray Methods
ISBN: 147571128X ISBN-13(EAN): 9781475711288
Издательство: Springer
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Цена: 12157.00 р.
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Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.

Optical Absorption of Impurities and Defects in Semiconducting Crystals

Автор: Bernard Pajot
Название: Optical Absorption of Impurities and Defects in Semiconducting Crystals
ISBN: 3642263569 ISBN-13(EAN): 9783642263569
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals, and also on their kinetics and transformations under annealing.

Extended Defects in Semiconductors

Автор: Holt
Название: Extended Defects in Semiconductors
ISBN: 1107424143 ISBN-13(EAN): 9781107424142
Издательство: Cambridge Academ
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Цена: 11405.00 р.
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Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Charged Semiconductor Defects

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Charged Semiconductor Defects

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1849968209 ISBN-13(EAN): 9781849968201
Издательство: Springer
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Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.


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