Defects in Liquid Crystals: Computer Simulations, Theory and Experiments, Oleg D. Lavrentovich; Paolo Pasini; Claudio Zannon

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: Holt
Название: Extended Defects in Semiconductors
ISBN: 1107424143 ISBN-13(EAN): 9781107424142
Издательство: Cambridge Academ
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Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Автор: J. Friedel; M. Lannoo
Название: Point Defects in Semiconductors I
ISBN: 3642815766 ISBN-13(EAN): 9783642815768
Издательство: Springer
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Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.

Автор: P. Gehlen
Название: Interatomic Potentials and Simulation of Lattice Defects
ISBN: 1468419943 ISBN-13(EAN): 9781468419948
Издательство: Springer
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Цена: 16979.00 р.
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Описание: The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.

Автор: B.K. Tanner
Название: Characterization of Crystal Growth Defects by X-Ray Methods
ISBN: 147571128X ISBN-13(EAN): 9781475711288
Издательство: Springer
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Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1849968209 ISBN-13(EAN): 9781849968201
Издательство: Springer
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Цена: 26120.00 р.
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Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.