Defects and Their Structure in Nonmetallic Solids, B. Henderson

Автор: Steger, Michael
Название: Transition-metal defects in silicon
ISBN: 364235078X ISBN-13(EAN): 9783642350788
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.

Автор: J. Friedel; M. Lannoo
Название: Point Defects in Semiconductors I
ISBN: 3642815766 ISBN-13(EAN): 9783642815768
Издательство: Springer
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Цена: 14365.00 р.
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Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.

Автор: Roman Louban
Название: Image Processing of Edge and Surface Defects
ISBN: 3642260357 ISBN-13(EAN): 9783642260353
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The edge and surface inspection is one of the most important and most challenging tasks in quality assessment in industrial production. Providing a valuable reference, this book offers a detailed description of optical methods for defect recognition.

Автор: Bernard Pajot
Название: Optical Absorption of Impurities and Defects in Semiconducting Crystals
ISBN: 3642263569 ISBN-13(EAN): 9783642263569
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals, and also on their kinetics and transformations under annealing.

Автор: Kipp van Schooten
Название: Optically Active Charge Traps and Chemical Defects in Semiconducting Nanocrystals Probed by Pulsed Optically Detected Magnetic Resonance
ISBN: 3319005898 ISBN-13(EAN): 9783319005898
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1849968209 ISBN-13(EAN): 9781849968201
Издательство: Springer
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Цена: 26120.00 р.
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Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: B.K. Tanner
Название: Characterization of Crystal Growth Defects by X-Ray Methods
ISBN: 147571128X ISBN-13(EAN): 9781475711288
Издательство: Springer
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Цена: 12157.00 р.
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Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.

Автор: P. Gehlen
Название: Interatomic Potentials and Simulation of Lattice Defects
ISBN: 1468419943 ISBN-13(EAN): 9781468419948
Издательство: Springer
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Цена: 16979.00 р.
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Описание: The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.