Metal Impurities in Silicon- and Germanium-Based Technologies, Claeys

Автор: Klaus Graff
Название: Metal Impurities in Silicon-Device Fabrication
ISBN: 3642629652 ISBN-13(EAN): 9783642629655
Издательство: Springer
Рейтинг:
Цена: 13060.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. This new edition includes important recent data and many new tables.

Автор: M. Willander
Название: Silicon-Germanium Strained Layers and Heterostructures,
ISBN: 0127521836 ISBN-13(EAN): 9780127521831
Издательство: Elsevier Science
Рейтинг:
Цена: 29476.00 р.
Наличие на складе: Поставка под заказ.

Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.

Автор: Peter Pichler
Название: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
ISBN: 3709172047 ISBN-13(EAN): 9783709172049
Издательство: Springer
Рейтинг:
Цена: 41925.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.

Автор: Shiraki Yasuhiro, Usami Noritaka, Shiraki Y.
Название: Silicon-Germanium (Sige) Nanostructures: Production, Properties and Applications in Electronics
ISBN: 0081017391 ISBN-13(EAN): 9780081017395
Издательство: Elsevier Science
Рейтинг:
Цена: 30318.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.

Автор: Henning Pr?ser
Название: Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities
ISBN: 3319360515 ISBN-13(EAN): 9783319360515
Издательство: Springer
Рейтинг:
Цена: 13059.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Magnetic impurities in a non-magnetic host metal have been actively explored in condensed matter physics in recent last decades. This thesis contains a comprehensive description of the STM /STS technique, sub-surface impurities, as well as single- and two-impurity Kondo physics - and as such offers a valuable introduction to newcomers to the field.