Описание: Table of contents
Ⅰ Introduction
1 Features, Principles and Developments of Ferroelectric-gate Field Effect Transistors
- Prof. M. Okuyama
Ⅱ Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors
2 Development of High-Endurance and Long-Retention FeFETs
of Pt/CaySr1-yBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si Gate Stacks
- Mitsue Takahashi and Shigeki Sakai
3 Downsizing of high-endurance and long-retention Pt/CaySr1-yBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si FeFETs - Mitsue Takahashi and Shigeki Sakai
4 Nonvolatile field-effect transistors using ferroelectric doped HfO2 films
- Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic and Thomas Mikolajick
5 Switching in nanoscale hafnium oxide based ferroelectric transistor
- Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick and Stefan Slesazeck
III Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
6 Oxide-channel ferroelectric-gate thin film transistors with nonvolatile memory function - Eisuke Tokumitsu
7 ZnO/Pb(Zr, Ti)O3 gate structure Ferroelectric FETs - Yukihiro Kaneko
8 Novel ferroelectric gate field-effect transistors (FeFETs); controlled polarization-type FeFETs - Norifumi Fujimura and Takeshi Yoshimura
Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
9 Non-volatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin films
- Dae-Hee Han and Byung-Eun Park
10 Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferrorlrctric-gate FETs
- Yoshihisa Fujisaki
V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
11 P(VDF-TrFE) and P(VDF-TeFE)/organic semiconductor structure ferroelectric-gate FET memories
-Takeshi Kanashima and Masanori Okuyama
12 Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(vinylidene fluoride trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
-Sung-Min Yoon
VI
