Tunneling Field Effect Transistor Technology, Zhang Lining, Chan Mansun

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
Рейтинг:
Цена: 25336.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Park Byung-Eun, Ishiwara Hiroshi, Okuyama Masanori
Название: Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
ISBN: 9811512116 ISBN-13(EAN): 9789811512117
Издательство: Springer
Рейтинг:
Цена: 20962.00 р.
Наличие на складе: Поставка под заказ.

Описание: This book is intended for periodontal residents and practicing periodontists who wish to incorporate the principles of moderate sedation into daily practice. Comprehensive airway management and rescue skills are then documented in detail so that the patient may be properly managed in the event that the sedation progresses beyond the intended level.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
Рейтинг:
Цена: 16070.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
Рейтинг:
Цена: 14365.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Tigelaar, Howard
Название: How transistor area shrank by 1 million fold
ISBN: 3030400204 ISBN-13(EAN): 9783030400200
Издательство: Springer
Рейтинг:
Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.

Автор: Amara Amara; Olivier Rozeau
Название: Planar Double-Gate Transistor
ISBN: 9048181089 ISBN-13(EAN): 9789048181087
Издательство: Springer
Рейтинг:
Цена: 21661.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The aim of the editors here is to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can apply new transistor structures to come up with new cells and concepts.

Автор: Keng C. Wu
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1461353858 ISBN-13(EAN): 9781461353850
Издательство: Springer
Рейтинг:
Цена: 20962.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132216342 ISBN-13(EAN): 9788132216346
Издательство: Springer
Рейтинг:
Цена: 18167.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Ritchie, Gordon J. (university Of York, Uk)
Название: Transistor circuit techniques
ISBN: 0748740759 ISBN-13(EAN): 9780748740758
Издательство: Taylor&Francis
Рейтинг:
Цена: 10258.00 р.
Наличие на складе: Поставка под заказ.

Описание: One of a series intended for first- and second-year undergraduate courses, this text provides coverage of the design of both discrete and integrated electronic circuits. It guides students through the analysis and design of transistor circuits, using worked examples and design examples.

Автор: Prakash Gopalakrishnan; Rob A. Rutenbar
Название: Direct Transistor-Level Layout for Digital Blocks
ISBN: 1475779518 ISBN-13(EAN): 9781475779516
Издательство: Springer
Рейтинг:
Цена: 13974.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The approach described in this book can pack devices much more densely than a typical cell-based layout.Direct Transistor-Level Layout For Digital Blocks is a comprehensive reference work on device-level layout optimization, which will be valuable to CAD tool and circuit designers.