Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications, Park Byung-Eun, Ishiwara Hiroshi, Okuyama Masanori
Автор: Pietro Ferraro; Simonetta Grilli; Paolo De Natale Название: Ferroelectric Crystals for Photonic Applications ISBN: 3662501112 ISBN-13(EAN): 9783662501115 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.
Автор: Pietro Ferraro; Simonetta Grilli; Paolo De Natale Название: Ferroelectric Crystals for Photonic Applications ISBN: 3642410855 ISBN-13(EAN): 9783642410857 Издательство: Springer Рейтинг: Цена: 22203.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.
Автор: Hiroshi Ishiwara; Masanori Okuyama; Yoshihiro Arim Название: Ferroelectric Random Access Memories ISBN: 3540407189 ISBN-13(EAN): 9783540407188 Издательство: Springer Рейтинг: Цена: 36570.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects;
Описание: This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure.
Описание: This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure.
Автор: Supriya Karmakar Название: Novel Three-state Quantum Dot Gate Field Effect Transistor ISBN: 8132234901 ISBN-13(EAN): 9788132234906 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.
Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications presents the latest information in the emerging field of multiferroic materials research, exploring applications in energy conversion and harvesting at the nanoscale. The book covers crystal and microstructure, ferroelectric, piezoelectric and multiferroic physical properties, along with their characterization. Special attention is given to the design and tailoring of ferroelectric, magnetic and multiferroic materials and their interaction among ferroics. The fundamentals of energy conversion are incorporated, along with the requirements of materials for this process. Finally, a range of applications is presented, demonstrating the progression from fundamentals to applied science.
This essential resource describes the link between the basic physical properties of these materials and their applications in the field of energy harvest. It will be a useful resource for graduate students, early career researchers, academics and industry professionals working in areas related to energy conversion.
Bridges the gap between the fundamentals and applications of ferroelectric and multiferroic materials for energy harvesting
Demonstrates how a range of nanomaterials play an important role in the creation of efficient energy harvesting systems
Provides new solutions for the fabrication of electronic devices for various applications
Автор: Hiroshi Ishiwara; Masanori Okuyama; Yoshihiro Arim Название: Ferroelectric Random Access Memories ISBN: 3642073840 ISBN-13(EAN): 9783642073847 Издательство: Springer Рейтинг: Цена: 36570.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects;
Автор: Supriya Karmakar Название: Novel Three-state Quantum Dot Gate Field Effect Transistor ISBN: 8132216342 ISBN-13(EAN): 9788132216346 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.
Автор: Lining Zhang; Mansun Chan Название: Tunneling Field Effect Transistor Technology ISBN: 3319316516 ISBN-13(EAN): 9783319316512 Издательство: Springer Рейтинг: Цена: 16070.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Автор: Ouyang, Jun Название: Nanostructures in Ferroelectric Films for Energy Applications ISBN: 0128138564 ISBN-13(EAN): 9780128138564 Издательство: Elsevier Science Рейтинг: Цена: 33013.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanostructures in Ferroelectric Films for Energy Applications: Grains, Domains, Interfaces and Engineering Methods presents methods of engineering nanostructures in ferroelectric films to improve their performance in energy harvesting and conversion and storage. Ferroelectric films, which have broad applications, including the emerging energy technology, usually consist of nanoscale inhomogeneities. For polycrystalline films, the size and distribution of nano-grains determines the macroscopic properties, especially the field-induced polarization response. For epitaxial films, the energy of internal long-range electric and elastic fields during their growth are minimized by formation of self-assembled nano-domains. This book is an accessible reference for both instructors in academia and R&D professionals.
Provides the necessary components for the systematic study of the structure-property relationship in ferroelectric thin film materials using case studies in energy applications
Written by leading experts in the research areas of piezoelectrics, electrocalorics, ferroelectric dielectrics (especially in capacitive energy storage), ferroelectric domains, and ferroelectric-Si technology
Includes a well balanced mix of theoretical design and simulation, materials processing and integration, and dedicated characterization methods of the involved nanostructures
Автор: Zhang Lining, Chan Mansun Название: Tunneling Field Effect Transistor Technology ISBN: 3319810871 ISBN-13(EAN): 9783319810874 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.
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