Описание: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries.
Описание: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Автор: Khanna, Vinod Kumar Название: Introductory Nanoelectronics ISBN: 0815384262 ISBN-13(EAN): 9780815384267 Издательство: Taylor&Francis Рейтинг: Цена: 19906.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This introductory text develops the reader`s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems.
Part I Introduction: 1 The COMSON Project: Michael Gьnther and Uwe Feldmann.- Part II Partial Differential Algebraic Equations: 2 PDAE Modeling and Discretization: Giuseppe Alм, Massimiliano Culpo, Roland Pulch, Vittorio Romano and Sebastian Schцps.- 3 Simulation of Coupled PDAEs - Dynamic Iteration and Multirate Simulation: Giuseppe Alм, Andreas Bartel, Michael Gьnther, Vittorio Romano and Sebastian Schцps.- Part III Model Order Reduction: 4 Model Order Reduction - Methods, Concepts and Properties: Athanasios C. Antoulas, Roxana Ionutiu, Nelson Martins, E. Jan W. ter Maten, Kasra Mohaghegh, Roland Pulch, Joost Rommes, Maryam Saadvandi and Michael Striebel.- 5 Parameterized Model Order Reduction: Gabriela Ciuprina, Jorge Fernбndez Villena, Daniel Ioan, Zoran Ilievski, Sebastian Kula, E. Jan W. ter Maten, Kasra Mohaghegh, Roland Pulch, Wil H.A. Schilders, L. Miguel Silveira, Alexandra, Stefбnescu and Michael Striebel.- 6 Advanced topics in Model Order Reduction: Davit Harutyunyan, Roxana Ionutiu, E. Jan W. ter Maten, Joost Rommes, Wil H.A. Schilders and Michael Striebel.- Part IV Optimization: 7 Optimization Methods and Applications to microelectronics CAD: Salvatore Rinaudo, Valeria Cinnera Martino, Franco Fiorante, Giovanni Stracquadanio and Giuseppe Nicosia.- Part V COMSON Methodology: 8 COMSON Demonstrator Platform: Georg Denk, Tamara Bechtold, Massimiliano Culpo, Carlo de Falco, and Alexander Rusakov.- 9 eLearning in Industrial Mathematics with applications to Nanoelectronics: Giuseppe Alм, Eleonora Bilotta, Lorella Gabriele, Pietro Pantano, Josй Sepъlveda, Rocco Servidio, and Alexander Vasenev.- Index.
Part I Introduction: 1 The COMSON Project: Michael Gьnther and Uwe Feldmann.- Part II Partial Differential Algebraic Equations: 2 PDAE Modeling and Discretization: Giuseppe Alм, Massimiliano Culpo, Roland Pulch, Vittorio Romano and Sebastian Schцps.- 3 Simulation of Coupled PDAEs - Dynamic Iteration and Multirate Simulation: Giuseppe Alм, Andreas Bartel, Michael Gьnther, Vittorio Romano and Sebastian Schцps.- Part III Model Order Reduction: 4 Model Order Reduction - Methods, Concepts and Properties: Athanasios C. Antoulas, Roxana Ionutiu, Nelson Martins, E. Jan W. ter Maten, Kasra Mohaghegh, Roland Pulch, Joost Rommes, Maryam Saadvandi and Michael Striebel.- 5 Parameterized Model Order Reduction: Gabriela Ciuprina, Jorge Fernбndez Villena, Daniel Ioan, Zoran Ilievski, Sebastian Kula, E. Jan W. ter Maten, Kasra Mohaghegh, Roland Pulch, Wil H.A. Schilders, L. Miguel Silveira, Alexandra, Stefбnescu and Michael Striebel.- 6 Advanced topics in Model Order Reduction: Davit Harutyunyan, Roxana Ionutiu, E. Jan W. ter Maten, Joost Rommes, Wil H.A. Schilders and Michael Striebel.- Part IV Optimization: 7 Optimization Methods and Applications to microelectronics CAD: Salvatore Rinaudo, Valeria Cinnera Martino, Franco Fiorante, Giovanni Stracquadanio and Giuseppe Nicosia.- Part V COMSON Methodology: 8 COMSON Demonstrator Platform: Georg Denk, Tamara Bechtold, Massimiliano Culpo, Carlo de Falco, and Alexander Rusakov.- 9 eLearning in Industrial Mathematics with applications to Nanoelectronics: Giuseppe Alм, Eleonora Bilotta, Lorella Gabriele, Pietro Pantano, Josй Sepъlveda, Rocco Servidio, and Alexander Vasenev.- Index.
Название: Microelectronics to Nanoelectronics ISBN: 1138072370 ISBN-13(EAN): 9781138072374 Издательство: Taylor&Francis Рейтинг: Цена: 12554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.
Автор: Datta Supriyo Название: Lessons From Nanoelectronics: A New Perspective On Transport ISBN: 9814335282 ISBN-13(EAN): 9789814335287 Издательство: World Scientific Publishing Цена: 11088.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms in length.
These lecture notes are about a less appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, and device operation that it has enabled, which forms the basis for a new approach to transport problems.
The book assumes very little background beyond linear algebra and differential equations, and is intended to be accessible to anyone in any branch of science or engineering.
Readers are encouraged to visit the website http: //nanohub.org/groups/lnebook to access revisions, corrections, video lectures, tutorials, quizzes and also to join a Q&A forum based on questions from readers.
Автор: Datta Supriyo Название: Lessons From Nanoelectronics: A New Perspective On Transport ISBN: 9814335290 ISBN-13(EAN): 9789814335294 Издательство: World Scientific Publishing Цена: 5544.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms in length.
These lecture notes are about a less appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, and device operation that it has enabled, which forms the basis for a new approach to transport problems.
The book assumes very little background beyond linear algebra and differential equations, and is intended to be accessible to anyone in any branch of science or engineering.
Readers are encouraged to visit the website http: //nanohub.org/groups/lnebook to access revisions, corrections, video lectures, tutorials, quizzes and also to join a Q&A forum based on questions from readers.
Автор: Heikkila, Tero T. Название: The Physics of Nanoelectronics ISBN: 0199592446 ISBN-13(EAN): 9780199592449 Издательство: Oxford Academ Рейтинг: Цена: 16236.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an introduction to phenomena and models in nanoelectronics. It starts from the basics, but also introduces topics of recent interest, such as superconducting qubits, graphene, and quantum nanoelectromechanics.
Описание: The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
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