Yield-Aware Analog IC Design and Optimization in Nanometer-Scale Technologies, Canelas Antуnio Manuel Lourenзo, Guilherme Jorge Manuel Correia, Horta Nuno Cavaco Gomes

Автор: P. Avouris
Название: Atomic and Nanometer-Scale Modification of Materials
ISBN: 9401048959 ISBN-13(EAN): 9789401048958
Издательство: Springer
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Цена: 12157.00 р.
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Описание: This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992.

Автор: Mohamed Abu Rahma; Mohab Anis
Название: Nanometer Variation-Tolerant SRAM
ISBN: 1493902202 ISBN-13(EAN): 9781493902200
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This essential reference combines state-of-the-art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It shows designers how to apply practical techniques that optimize memory yield.

Автор: Tan Sheldon, Tahoori Mehdi, Kim Taeyoung
Название: Long-Term Reliability of Nanometer VLSI Systems: Modeling, Analysis and Optimization
ISBN: 3030261743 ISBN-13(EAN): 9783030261740
Издательство: Springer
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Цена: 20962.00 р.
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Описание:

Part I. New physics-based EM analysis and system-level dynamic reliability management.- Chapter 1. Introduction.- Chapter 2. Physics Based EM Modeling.- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method.- Chapter 4. Fast EM Immortatlity Analysis For Multisegment Copper Interconnect Wires.- Chapter 5. Dynamic EM Models For Transient Stress Evolution and Recovery.- Chapter 6. Compact EM Models for Multi-SEgment Interconnect Wires.- Chapter 7. EM Assesment for Power Grid Networks.- Chapter 8. Resource Based EM Modeling for Multi-Crore Microprocessors.- Chapter 9. DRM and Optimization for Real Time Embedded Systems.- Chapter 10. Learning Based DRM and Energy Optimization for Many Core Dark Silicaon Processors.- Chapter 11. Recovery Aware DRM for Near Threshold Dark Silicon Processors.- Chapter 12. Cross-Layer DRM and Optimization For Datacenter Systems.- Part II. Transistor Aging Effects and Reliability.- 13. Introduction.- Chapter 14. Aging AWare Timings Analysis.- Chapter 15. Aging Aware Standard Cell Library Optimization Methods.- Chapter 16. Aging Effects In Sequential Elements.- Chapter 17. Aging Guardband Reduction Through Selective Flip Flop Optimization.- Chapter 18. Workload Aware Static Aging Monitoring and Mitigation of Timing Critical Flip Flops.- Chapter 19. Aging Relaxation at Micro Architecture Level Using Special NOPS.- Chapter 20. Extratime Modelling and Analyis of Transistor Agin at Microarchitecture Level.- Chapter 21. Reducing Processor Wearout By Exploiting The Timing Slack of Instructions.

Автор: Siva G. Narendra; Anantha P. Chandrakasan
Название: Leakage in Nanometer CMOS Technologies
ISBN: 1441938265 ISBN-13(EAN): 9781441938268
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles.

Автор: Uhrmann, Heimo Kolm, Robert Zimmermann, Horst
Название: Analog filters in nanometer cmos
ISBN: 3642380123 ISBN-13(EAN): 9783642380129
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book presents recent results in the development of analog filters in nanometer CMOS. It describes methods for successfully dealing with nanometer devices and includes numerous detailed circuit diagrams and plots of measured results.

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1461461626 ISBN-13(EAN): 9781461461623
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Автор: Heimo Uhrmann; Robert Kolm; Horst Zimmermann
Название: Analog Filters in Nanometer CMOS
ISBN: 3642430295 ISBN-13(EAN): 9783642430299
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book presents recent results in the development of analog filters in nanometer CMOS. It describes methods for successfully dealing with nanometer devices and includes numerous detailed circuit diagrams and plots of measured results.

Автор: Swarup Bhunia; Saibal Mukhopadhyay
Название: Low-Power Variation-Tolerant Design in Nanometer Silicon
ISBN: 1489981578 ISBN-13(EAN): 9781489981578
Издательство: Springer
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Цена: 16977.00 р.
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Описание: Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations.

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1489986308 ISBN-13(EAN): 9781489986306
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Автор: Massimo Alioto; Elio Consoli; Gaetano Palumbo
Название: Flip-Flop Design in Nanometer CMOS
ISBN: 3319019961 ISBN-13(EAN): 9783319019963
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book offers a comprehensive treatment of Flip-Flop design, including nanometer effects and the consequent design tradeoffs for current and future VLSI systems. It examines more than 20 topologies, covering all relevant classes of circuits.

Автор: Nisar Ahmed
Название: Nanometer Technology Designs
ISBN: 1441945598 ISBN-13(EAN): 9781441945594
Издательство: Springer
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Цена: 21661.00 р.
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Описание: Traditional at-speed test methods cannot guarantee high quality test results as they face many new challenges. Supply noise effects on chip performance, high test pattern volume, small delay defect test pattern generation, high cost of test implementation and application, and utilizing low-cost testers are among these challenges.

Автор: Massimo Alioto; Elio Consoli; Gaetano Palumbo
Название: Flip-Flop Design in Nanometer CMOS
ISBN: 3319345923 ISBN-13(EAN): 9783319345925
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book offers a comprehensive treatment of Flip-Flop design, including nanometer effects and the consequent design tradeoffs for current and future VLSI systems. It examines more than 20 topologies, covering all relevant classes of circuits.