Автор: Horowitz Paul Название: The art of electronics The x Chapters ISBN: 1108499945 ISBN-13(EAN): 9781108499941 Издательство: Cambridge Academ Рейтинг: Цена: 8870.00 р. Наличие на складе: Заказано в издательстве.
Описание: The x-Chapters is the missing pieces of The Art of Electronics, to be used either as its complement, or as a direct route to exploring some of the most exciting and oft-overlooked topics in advanced electronic engineering. Students, researchers and practitioners will find here techniques and circuits that are unavailable elsewhere.
Описание: Written by a leading author on the subject, PID and Predictive Control of Electric Drives and Power Supplies using MATLAB / Simulink provides a timely introduction to current research on PID and predictive control.
Описание: Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc.
Автор: Gan Название: Visual Sensing and its Applications ISBN: 3642182860 ISBN-13(EAN): 9783642182860 Издательство: Springer Рейтинг: Цена: 16070.00 р. Наличие на складе: Поставка под заказ.
Описание: “Visual Sensing and its Applications: Integration of Laser Sensors to Industrial Robots” provides comprehensive and up-to-date coverage of research and development on this robotic vision system. A laser-structured light is the main concern in discussions of visual sensing. Also addressed in this book are all components of the robotic vision system and an emphasis on how to increase the accuracy of the system using three levels of calibration. This includes calibration of the vision system (eye calibration), calibration of eye-to-hand configuration and calibration of robot kinematics (hand calibration). With the integration of the laser sensors to industrial robots numerous applications in the field of robotic welding, grinding, machining, inspection, and palletizing are illustrated based on practical engineering projects in order to demonstrate how the visual sensing is performed. The book will serve as a valuable resource for researchers and engineers in the areas of robotics and machine vision. Dr. Zhongxue Gan is a vice chairman and chief scientist of the ENN Group, China. He serves as a member of the National Energy Expert Consultation Committee of China and member of the National Coal Council of the USA. He is also a co-founder of Intersmart Robotic Systems Co. Ltd., China. He was a research fellow in flexible automation systems at ABB and a founding director of ABB Corporate Research Robot Laboratories, both in the USA and in China. Dr. Qing Tang is a co-founder and CEO of Intersmart Robotic Systems Co. Ltd., China and an adjunct professor in Physics at Sichuan University, China. He was a principle consulting engineer and project manager at the ABB Corporate Research Robot Laboratory in the USA.
Автор: George Antaki Название: Nuclear Power Plant Safety and Mechanical Integrity ISBN: 0124172482 ISBN-13(EAN): 9780124172487 Издательство: Elsevier Science Рейтинг: Цена: 18528.00 р. Наличие на складе: Поставка под заказ.
Описание: One of the most critical requirements for safe and reliable nuclear power plant operations is the availability of competent maintenance personnel. However, just as the nuclear power industry is experiencing a renaissance, it is also experiencing an exodus of seasoned maintenance professionals due to retirement. The perfect guide for engineers just entering the field or experienced maintenance supervisors who need to keep abreast of the latest industry best practices, Nuclear Power Plant Maintenance: Mechanical Systems, Equipment and Safety covers the most common issues faced in day-to-day operations and provides practical, technically proven solutions. The book also explains how to navigate the various maintenance codes, standards and regulations for the nuclear power industry.
Автор: Fay Patrick, Jena Debdeep, Maki Paul Название: High-Frequency Gan Electronic Devices ISBN: 3030202100 ISBN-13(EAN): 9783030202101 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
Автор: Stephen Pearton Название: GaN and ZnO-based Materials and Devices ISBN: 3642433235 ISBN-13(EAN): 9783642433238 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a review and summary of recent progress in scientifically and technologically important AlInGaN and ZnO materials systems, including applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices.
Автор: Patrick Fay; Debdeep Jena; Paul Maki Название: High-Frequency GaN Electronic Devices ISBN: 3030202070 ISBN-13(EAN): 9783030202071 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.
Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;
Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;
Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;
Includes fundamental physics, as well as numerical simulations and experimental realizations.
Автор: Gan-Moog Chow; Ilya A. Ovid`ko; Thomas Tsakalakos Название: Nanostructured Films and Coatings ISBN: 0792362659 ISBN-13(EAN): 9780792362654 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Nanostructured films and coatings possess unique properties due to both size and interface effects. The focus of this text is on synthesis and processing; advanced characterization techniques; properties; modelling of interlayer and intralayer interfaces; and applications.
Описание: Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continues to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Описание: Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc.
Автор: Pearton Название: GaN and ZnO-based Materials and Devices ISBN: 3642235204 ISBN-13(EAN): 9783642235207 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
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