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High-Frequency GaN Electronic Devices, Patrick Fay; Debdeep Jena; Paul Maki


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Цена: 16769.00р.
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Автор: Patrick Fay; Debdeep Jena; Paul Maki
Название:  High-Frequency GaN Electronic Devices
ISBN: 9783030202071
Издательство: Springer
Классификация:
ISBN-10: 3030202070
Обложка/Формат: Hardcover
Страницы: 309
Вес: 0.65 кг.
Дата издания: 2020
Язык: English
Издание: 1st ed. 2020
Иллюстрации: 200 tables, color; 199 illustrations, color; 22 illustrations, black and white; viii, 309 p. 221 illus., 199 illus. in color.
Размер: 234 x 156 x 19
Читательская аудитория: Professional & vocational
Основная тема: Engineering
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание:

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.

  • Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;
  • Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;
  • Provides vertically integrated coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;
  • Includes fundamental physics, as well as numerical simulations and experimental realizations.



Дополнительное описание: Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapt



The Art of Electronics

Автор: Horowitz
Название: The Art of Electronics
ISBN: 0521809266 ISBN-13(EAN): 9780521809269
Издательство: Cambridge Academ
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Цена: 13622.00 р.
Наличие на складе: Заказано в издательстве.

Описание: At long last, here is the thoroughly revised and updated, and long-anticipated, third edition of the hugely successful The Art of Electronics. Widely accepted as the best single authoritative text on electronic circuit design, it will be an indispensable reference and the gold standard for anyone in the field.

Surface Electromagnetics: With Applications in Antenna, Microwave, and Optical Engineering

Автор: Fan Yang, Yahya Rahmat-Samii
Название: Surface Electromagnetics: With Applications in Antenna, Microwave, and Optical Engineering
ISBN: 1108470262 ISBN-13(EAN): 9781108470261
Издательство: Cambridge Academ
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Цена: 27878.00 р.
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Описание: Written by leading experts in the field, this text provides systematic coverage of the theoretical analysis, physics, functional designs, and engineering applications of advanced engineered electromagnetic surfaces. It is invaluable reading for researchers, practising engineers and students in electromagnetics, antennas, metasurfaces and optics.

High-Frequency Characterization of Electronic Packaging

Автор: Luc Martens
Название: High-Frequency Characterization of Electronic Packaging
ISBN: 0792383079 ISBN-13(EAN): 9780792383079
Издательство: Springer
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Цена: 19591.00 р.
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Описание: Offers an insight into how high-frequency characterization of electronic packaging should be done and describes the problems that have to be tackled, especially in performing accurate measurements on modern IC-packages and in determination of circuit models.

High Power Microwave Tubes, Volume 1: Basics and Trends

Автор: Vishal Kesari, B.N. Basu
Название: High Power Microwave Tubes, Volume 1: Basics and Trends
ISBN: 1681745607 ISBN-13(EAN): 9781681745602
Издательство: Mare Nostrum (Eurospan)
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Цена: 8455.00 р.
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Описание: Our aim in this book is to present a bird's-eye view of microwave tubes (MWTs) which continue to be important despite competitive incursions from solid-state devices (SSDs). We have presented a broad and introductory survey which we hope the readers would be encouraged to read rather than going through lengthier books, and subsequently explore the field of MWTs further in selected areas of relevance to their respective interests. We hope that the present book would motivate newcomers to pursue research in MWTs and apprise them as well as decision makers of the salient features and prospects of as well as the trends of progress in MWTs. The scope of ever expanding applications of MWTs in the high power and high frequency regime will sustain and intensify the research and development in MWTs in coming years.

High Power Microwave Tubes, Volume 2: Basics and Trends

Автор: Vishal Kesari, B.N. Basu
Название: High Power Microwave Tubes, Volume 2: Basics and Trends
ISBN: 1681747057 ISBN-13(EAN): 9781681747057
Издательство: Mare Nostrum (Eurospan)
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Цена: 7623.00 р.
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Описание: Volume 2 of the book begins with chapter 6, in which we have taken up conventional MWTs (such as TWTs, klystrons, including multi-cavity and multi-beam klystrons, klystron variants including reflex klystron, IOT, EIK, EIO and twystron, and crossed-field tubes, namely, magnetron, CFA and carcinotron). In chapter 7, we have taken up fast-wave tubes (such as gyrotron, gyro-BWO, gyro-klystron, gyro-TWT, CARM, SWCA, hybrid gyro-tubes and peniotron). In chapter 8, we discuss vacuum microelectronic tubes (such as klystrino module, THz gyrotron and clinotron BWO); plasma-assisted tubes (such as PWT, plasma-filled TWT, BWO, including PASOTRON, and gyrotron); and HPM (high power microwave) tubes (such as relativistic TWT, relativistic BWO, RELTRON (variant of relativistic klystron), relativistic magnetron, high power Cerenkov tubes including SWO, RDG or orotron, MWCG and MWDG, bremsstrahlung radiation type tube, namely, vircator, and M-type tube MILO). In Chapter 9, we provide handy information about the frequency and power ranges of common MWTs, although more such information is provided at relevant places in the rest of the book as and where necessary. Chapter 10 is an epilogue that sums up the authors' attempt to bring out the various aspects of the basics of and trends in high power MWTs.

High Power Microwave Tubes, Volume 2: Basics and Trends

Автор: Vishal Kesari, B.N. Basu
Название: High Power Microwave Tubes, Volume 2: Basics and Trends
ISBN: 1681749351 ISBN-13(EAN): 9781681749358
Издательство: Mare Nostrum (Eurospan)
Рейтинг:
Цена: 10672.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Volume 2 of the book begins with chapter 6, in which we have taken up conventional MWTs (such as TWTs, klystrons, including multi-cavity and multi-beam klystrons, klystron variants including reflex klystron, IOT, EIK, EIO and twystron, and crossed-field tubes, namely, magnetron, CFA and carcinotron). In chapter 7, we have taken up fast-wave tubes (such as gyrotron, gyro-BWO, gyro-klystron, gyro-TWT, CARM, SWCA, hybrid gyro-tubes and peniotron). In chapter 8, we discuss vacuum microelectronic tubes (such as klystrino module, THz gyrotron and clinotron BWO); plasma-assisted tubes (such as PWT, plasma-filled TWT, BWO, including PASOTRON, and gyrotron); and HPM (high power microwave) tubes (such as relativistic TWT, relativistic BWO, RELTRON (variant of relativistic klystron), relativistic magnetron, high power Cerenkov tubes including SWO, RDG or orotron, MWCG and MWDG, bremsstrahlung radiation type tube, namely, vircator, and M-type tube MILO). In Chapter 9, we provide handy information about the frequency and power ranges of common MWTs, although more such information is provided at relevant places in the rest of the book as and where necessary. Chapter 10 is an epilogue that sums up the authors' attempt to bring out the various aspects of the basics of and trends in high power MWTs.

Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters

Автор: Shiban Kishen Koul, Sukomal Dey
Название: Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters
ISBN: 0815361432 ISBN-13(EAN): 9780815361435
Издательство: Taylor&Francis
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Цена: 24499.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The book covers extensive and systematic measurement study of the MEMS switches that includes mechanical, electrical, transient, linearity, power handling, temperature stability, loss and reliability. Study of switch reliability is one of the critical features in this book.

Progress in High-Efficient Solution Process Organic Photovoltaic Devices

Автор: Yang Yang; Gang Li
Название: Progress in High-Efficient Solution Process Organic Photovoltaic Devices
ISBN: 3662520907 ISBN-13(EAN): 9783662520901
Издательство: Springer
Рейтинг:
Цена: 19589.00 р.
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Описание: Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc.

Scaling and integration of high-speed electronics and optomechanical systems

Название: Scaling and integration of high-speed electronics and optomechanical systems
ISBN: 9813225394 ISBN-13(EAN): 9789813225398
Издательство: World Scientific Publishing
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Цена: 16474.00 р.
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Описание:

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.

In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Advanced Simulation  Methods For Gallium Nitride Electronic Devices: An accurate analysis of  state-of-the-art high-frequency and high-power Gallium Nitride High   Electron Mobility Transistors

Автор: Fabio Alessio Marino
Название: Advanced Simulation Methods For Gallium Nitride Electronic Devices: An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors
ISBN: 363931929X ISBN-13(EAN): 9783639319293
Издательство: LAP LAMBERT Academic Publishing
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Цена: 4575.00 р.
Наличие на складе: Нет в наличии.

GaN and ZnO-based Materials and Devices

Автор: Stephen Pearton
Название: GaN and ZnO-based Materials and Devices
ISBN: 3642433235 ISBN-13(EAN): 9783642433238
Издательство: Springer
Рейтинг:
Цена: 19589.00 р.
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Описание: This book offers a review and summary of recent progress in scientifically and technologically important AlInGaN and ZnO materials systems, including applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices.

GaN and ZnO-based Materials and Devices

Автор: Pearton
Название: GaN and ZnO-based Materials and Devices
ISBN: 3642235204 ISBN-13(EAN): 9783642235207
Издательство: Springer
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Цена: 23508.00 р.
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Описание: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.


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