Описание: This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
Автор: Ye Zhou Название: Semiconducting Metal Oxide Thin-Film Transistors ISBN: 0750325542 ISBN-13(EAN): 9780750325547 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 25344.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Patrick McGorry has transformed the lives of thousands of young people through early intervention and a holistic approach to mental health care. Here, he presents his plan for mental wealth for all Australians - he wants to ensure that all Australians have every chance for a fulfilling and mentally healthy life, crucially supported by stigma-free access to humane and effective mental health care.
Автор: Taur, Yuan, Название: Fundamentals of modern VLSI devices / ISBN: 1108480020 ISBN-13(EAN): 9781108480024 Издательство: Cambridge Academ Рейтинг: Цена: 8554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.
Автор: Ioannis Kymissis Название: Organic Field Effect Transistors ISBN: 1441947116 ISBN-13(EAN): 9781441947116 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.
Автор: J.-P. Colinge Название: FinFETs and Other Multi-Gate Transistors ISBN: 1441944095 ISBN-13(EAN): 9781441944092 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.
Описание: Want to know how to use an electronic component? This second book of a three-volume set includes key information on electronics parts for your projects - complete with photographs, schematics, and diagrams. You`ll learn what each one does, how it works, why it`s useful, and what variants exist.
Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.
Автор: Goser Название: Nanoelectronics and Nanosystems ISBN: 3540404430 ISBN-13(EAN): 9783540404439 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Nanoelectronics provides an accessible introduction for prospective and practicing electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1493944827 ISBN-13(EAN): 9781493944828 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: S.D. Brotherton Название: Introduction to Thin Film Transistors ISBN: 3319033107 ISBN-13(EAN): 9783319033105 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.
Автор: Geert Hellings; Kristin De Meyer Название: High Mobility and Quantum Well Transistors ISBN: 9400795696 ISBN-13(EAN): 9789400795693 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
