Автор: Horowitz Paul Название: The art of electronics The x Chapters ISBN: 1108499945 ISBN-13(EAN): 9781108499941 Издательство: Cambridge Academ Рейтинг: Цена: 8870.00 р. Наличие на складе: Заказано в издательстве.
Описание: The x-Chapters is the missing pieces of The Art of Electronics, to be used either as its complement, or as a direct route to exploring some of the most exciting and oft-overlooked topics in advanced electronic engineering. Students, researchers and practitioners will find here techniques and circuits that are unavailable elsewhere.
Автор: Chang, William S. C. (University of California, San Diego) Название: Principles of Optics for Engineers ISBN: 1107074908 ISBN-13(EAN): 9781107074903 Издательство: Cambridge Academ Рейтинг: Цена: 19800.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Uniting classical and modern photonics approaches to optics by presenting optical analyses as solutions of Maxwell`s equations, this unique book enables students and practitioners to fully understand the interplay between the different methods. Diffraction and modal analysis are covered and applied to imaging, spectral analysis, signal processing, and optoelectronic devices.
Автор: Huang Fei, Yip Hin-Lap, Cao Yong Название: Polymer Photovoltaics: Materials, Physics, and Device Engineering ISBN: 1849739870 ISBN-13(EAN): 9781849739870 Издательство: Royal Society of Chemistry Рейтинг: Цена: 37805.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: An international perspective on the latest research in polymer solar cell technology.
Автор: Senthil T. Kumar, Bala Mathivanan Название: Computation and Communication Technologies ISBN: 3110450070 ISBN-13(EAN): 9783110450071 Издательство: Walter de Gruyter Рейтинг: Цена: 18586.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This conference proceedings summarizes invited publications from the two IDES (Institute of Doctors Engineers and Scientists) International conferences, both held in Bangalore/ India.
Описание: Analog-to-digital (A/D) and digital-to-analog (D/A) converters, or data converters in short, play a critical role as interfaces between the real analog world and digital equipment. They are now indispensable in the field of sensor networks, internet of things (IoT), robots, and automatic driving vehicles, as well as high-precision instrumentation and wideband communication systems. As the world increasingly relies on digital information processing, the importance of data converters continues to increase. The primary purpose of this book is to explain the fundamentals of data converters for students and engineers involved in this fascinating field as a newcomer. The selected topics are as follows: Sampling and quantization Sample-and-hold (S/H) circuits and comparators Architectures and circuit implementations of D/A converters Architectures and circuit implementations of Nyquist-rate and oversampling A/D converters Recent trends based on scaled-down CMOS technology Introduction to Analog-to-Digital Converters is not only for circuit designers, but also for engineers who are trying to develop their target by using A/D converters. The book will also help students who have learned the basics of analog circuit design to understand the state-of-the-art data converters. It is desirable for readers to be familiar with basic analog IC design and digital signal processing using z-transform.
Описание: With the fast pace of developments in quantum technologies, it is more than ever necessary to make the new generation of students in science and engineering familiar with the key ideas behind such disruptive systems. This book intends to fill such a gap between experts and non-experts in the field by providing the reader with the basic tools needed to understand the latest developments in quantum communications and its future directions. This is not only to expand the audience knowledge but also to attract new talents to this flourishing field. To that end, the book as a whole does not delve into much detail and most often suffices to provide some insight into the problem in hand. The primary users of the book will then be students in science and engineering in their final year of undergraduate studies or early years of their post-graduate programmes.
Описание: With the fast pace of developments in quantum technologies, it is more than ever necessary to make the new generation of students in science and engineering familiar with the key ideas behind such disruptive systems. This book intends to fill such a gap between experts and non-experts in the field by providing the reader with the basic tools needed to understand the latest developments in quantum communications and its future directions. This is not only to expand the audience knowledge but also to attract new talents to this flourishing field. To that end, the book as a whole does not delve into much detail and most often suffices to provide some insight into the problem in hand. The primary users of the book will then be students in science and engineering in their final year of undergraduate studies or early years of their post-graduate programmes.
Автор: Peng Cong Название: Circuit Design Considerations for Implantable Devices ISBN: 8793519869 ISBN-13(EAN): 9788793519862 Издательство: Taylor&Francis Рейтинг: Цена: 12554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Implantable devices are a unique area for circuit designers. A comprehensive understanding of design trade-offs at the system level is important to ensure device success. Circuit Design Considerations for Implantable Devices provides knowledge to CMOS circuit designers with limited biomedical background to understand design challenges and trade-offs for implantable devices, especially neural interfacing.
Technical topics discussed in the book include:
Neural interface
Neural sensing amplifiers
Electrical stimulation
Embedded Signal Analysis
Wireless Power Transmission to mm-Sized Free-Floating Distributed Implants
Next Generation Neural Interface Electronics
Автор: Cristiano Calligaro; Umberto Gatti; Название: Rad-hard Semiconductor Memories ISBN: 8770220204 ISBN-13(EAN): 9788770220200 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components.Technical topics discussed in the book include:Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Описание: Provides best-practise manual methods and links them tightly to up-to-date automation algorithms. This book includes tractable examples and explains key techniques. The book will enable readers to select and setup suitable methods for each design task - knowing their prerequisites, advantages and their limitations.
Автор: Masoud Babaie, Mina Shahmohammadi, Robert Bogdan S Название: RF CMOS Oscillators for Modern Wireless Applications ISBN: 8793609493 ISBN-13(EAN): 9788793609495 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator's tuning range is usually at the expense of die area (cost) or phase noise.
The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable.
Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include:
- Design and analysis of low phase-noise class-F oscillators - Analyze a technique to reduce 1/f noise up-conversion in the oscillators - Design and analysis of low power/low voltage oscillators - Wide tuning range oscillators - Reliability study of RF oscillators in nanoscale CMOS
Автор: Juin J. Liou,Shien-Kuei Liaw,Yung-Hui Chung Название: Nano Devices and Sensors ISBN: 1501510509 ISBN-13(EAN): 9781501510502 Издательство: Walter de Gruyter Цена: 14867.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
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