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Machine Learning and Non-volatile Memories, Rino Micheloni, Cristian Zambelli


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Автор: Rino Micheloni, Cristian Zambelli   (Микелони)
Название:  Machine Learning and Non-volatile Memories
Перевод названия: Машинное обучение и энергонезависимая память
ISBN: 9783031038402
Издательство: Springer
Классификация:



ISBN-10: 3031038401
Обложка/Формат: Hardback
Страницы: 161
Вес: 0.45 кг.
Дата издания: 09.06.2022
Серия: Synthesis lectures on technology and health
Язык: English
Издание: 1st ed. 2022
Иллюстрации: 100 tables, color; 100 illustrations, color; 16 illustrations, black and white; xxiii, 161 p. 116 illus., 100 illus. in color.; 100 tables, color; 100
Размер: 235 x 155
Читательская аудитория: Professional & vocational
Основная тема: Engineering
Подзаголовок: Proceedings of the 12th and of the 13th international workshop on parallel tools for high performance computing, stuttgart, germany, september 2018, and dresden, germany, september 2019
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book presents the basics of both NAND flash storage and machine learning, detailing the storage problems the latter can help to solve. At a first sight, machine learning and non-volatile memories seem very far away from each other. Machine learning implies mathematics, algorithms and a lot of computation; non-volatile memories are solid-state devices used to store information, having the amazing capability of retaining the information even without power supply.

This book will help the reader understand how these two worlds can work together, bringing a lot of value to each other. In particular, the book covers two main fields of application: analog neural networks (NNs) and solid-state drives (SSDs). After reviewing the basics of machine learning in Chapter 1, Chapter 2 shows how neural networks can mimic the human brain; to accomplish this result, neural networks have to perform a specific computation called vector-by-matrix (VbM) multiplication, which is particularly power hungry.

In the digital domain, VbM is implemented by means of logic gates which dictate both the area occupation and the power consumption; the combination of the two poses serious challenges to the hardware scalability, thus limiting the size of the neural network itself, especially in terms of the number of processable inputs and outputs. Non-volatile memories (phase change memories in Chapter 3, resistive memories in Chapter 4, and 3D flash memories in Chapter 5 and Chapter 6) enable the analog implementation of the VbM (also called neuromorphic architecture), which can easily beat the equivalent digital implementation in terms of both speed and energy consumption. SSDs and flash memories are strictly coupled together; as 3D flash scales, there is a significant amount of work that has to be done in order to optimize the overall performances of SSDs.

Machine learning has emerged as a viable solution in many stages of this process. After introducing the main flash reliability issues, Chapter 7 shows both supervised and un-supervised machine learning techniques that can be applied to NAND. In addition, Chapter 7 deals with algorithms and techniques for a pro-active reliability management of SSDs.

Last but not least, the last section of Chapter 7 discusses the next challenge for machine learning in the context of the so-called computational storage. No doubt that machine learning and non-volatile memories can help each other, but we are just at the beginning of the journey; this book helps researchers understand the basics of each field by providing real application examples, hopefully, providing a good starting point for the next level of development.




Emerging Non-Volatile Memories

Автор: Seungbum Hong; Orlando Auciello; Dirk Wouters
Название: Emerging Non-Volatile Memories
ISBN: 1489975365 ISBN-13(EAN): 9781489975362
Издательство: Springer
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Цена: 18284.00 р.
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In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories

Автор: Gastaldi Roberto, Campardo Giovanni
Название: In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories
ISBN: 3319838067 ISBN-13(EAN): 9783319838069
Издательство: Springer
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Цена: 12577.00 р.
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Описание: This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry.

In Search of the Next Memory

Автор: Roberto Gastaldi; Giovanni Campardo
Название: In Search of the Next Memory
ISBN: 3319477226 ISBN-13(EAN): 9783319477220
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry.

Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures

Автор: Dimitrakis Panagiotis
Название: Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures
ISBN: 3319839993 ISBN-13(EAN): 9783319839998
Издательство: Springer
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Цена: 13974.00 р.
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VLSI-Design of Non-Volatile Memories

Автор: Giovanni Campardo; Rino Micheloni; David Novosel
Название: VLSI-Design of Non-Volatile Memories
ISBN: 3642057748 ISBN-13(EAN): 9783642057748
Издательство: Springer
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Цена: 28732.00 р.
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Описание: The design of integrated circuits today remains an essential discipline in s- port of technological progress, and the authors of this book have taken a giant step forward in the development of a practice-oriented treatise for design engineers who are interested in the practical, industry-driven world of integrated circuit - sign.

Charge-Trapping Non-Volatile Memories

Автор: Panagiotis Dimitrakis
Название: Charge-Trapping Non-Volatile Memories
ISBN: 3319487035 ISBN-13(EAN): 9783319487038
Издательство: Springer
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Цена: 18167.00 р.
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Error Correction Codes for Non-Volatile Memories

Автор: Rino Micheloni; A. Marelli; R. Ravasio
Название: Error Correction Codes for Non-Volatile Memories
ISBN: 9048178649 ISBN-13(EAN): 9789048178643
Издательство: Springer
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Цена: 20896.00 р.
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Описание: This book presents the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. It also includes a collection of software routines.

Non-volatile Memories

Автор: Lacaze
Название: Non-volatile Memories
ISBN: 1848216238 ISBN-13(EAN): 9781848216235
Издательство: Wiley
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Цена: 22010.00 р.
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Описание: Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.

Sensing of Non-Volatile Memory Demystified

Автор: Swaroop Ghosh
Название: Sensing of Non-Volatile Memory Demystified
ISBN: 3319973452 ISBN-13(EAN): 9783319973456
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.

Design Exploration of Emerging Nano-scale Non-volatile Memory

Автор: Hao Yu; Yuhao Wang
Название: Design Exploration of Emerging Nano-scale Non-volatile Memory
ISBN: 1493905503 ISBN-13(EAN): 9781493905508
Издательство: Springer
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Цена: 19564.00 р.
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Описание: With focused coverage of key topics ranging from device fabrication to hybrid NVM memory system design-space optimization, this systematic treatment of emerging nano-scale NVM devices adopts a circuits/systems perspective that includes memristic dynamics.

Advances in Non-volatile Memory and Storage Technology

Автор: Nishi, Yoshio
Название: Advances in Non-volatile Memory and Storage Technology
ISBN: 008102584X ISBN-13(EAN): 9780081025840
Издательство: Elsevier Science
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Цена: 30318.00 р.
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Описание:

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.

This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.

  • Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
  • Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
  • Examines improvements to flash technology, charge trapping and resistive random access memory
Sensing of Non-Volatile Memory Demystified

Автор: Swaroop Ghosh
Название: Sensing of Non-Volatile Memory Demystified
ISBN: 3030073394 ISBN-13(EAN): 9783030073398
Издательство: Springer
Рейтинг:
Цена: 13974.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.


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