Описание: A timely reference from leading experts on semiconductor nanowires and their applications.
Автор: Coffer, J.L. Название: Semiconducting Silicon Nanowires For Biomedical Applications ISBN: 0128213515 ISBN-13(EAN): 9780128213513 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material.
The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology.
Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures.
Автор: Rao C. N. Ram, Govindaraj A. Название: Nanotubes and Nanowires ISBN: 184973058X ISBN-13(EAN): 9781849730587 Издательство: Royal Society of Chemistry Рейтинг: Цена: 29566.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is ideal both for graduates needing an introduction to the field of nanomaterials as well as for professionals and researchers in academia and industry.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Gott James A. Название: Defects in Self-Catalysed III-V Nanowires ISBN: 3030940616 ISBN-13(EAN): 9783030940614 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
Описание: Part 1: Key concepts and contributions.- Chapter 1: Introduction.- Chapter 2: Andreev levels.- Chapter 3: Probing Andreev levels with cQED.- Chapter 4: Unlocking the spin of a quasiparticle.- Chapter 5: Future directions.- Part 2 The beautiful, messy details.- Chapter 6: BCS superconductivity.- Chapter 7: Andreev reflection, Andreev levels, and the Josephson effect.- Chapter 8: Andreev levels in Josephson nanowires.- Chapter 9: What would happen in a topological weak link?.- Chapter 10: The device.- Chapter 11: Spectroscopy and dispersive shifts.- Chapter 12: Raman transitions of the quasiparticle spin.- Chapter 13: Interactions of Andreev levels with the environment.- Chapter 14: Unexplained observations.
Автор: Shadi A. Dayeh Название: Semiconductor Nanowires ISBN: 0128040165 ISBN-13(EAN): 9780128040164 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literatureContains a broad view, including examination of semiconductor nanowires
Автор: Altomare Название: One-Dimensional Superconductivity in Nanowires ISBN: 3527409955 ISBN-13(EAN): 9783527409952 Издательство: Wiley Рейтинг: Цена: 16307.00 р. Наличие на складе: Поставка под заказ.
Автор: Cui Название: Nanowires — Synthesis, Properties, Assembly and Applications ISBN: 1605111163 ISBN-13(EAN): 9781605111162 Издательство: Cambridge Academ Рейтинг: Цена: 17424.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book offers an overview of critical issues related to nanowires, as well as progress in synthesis, structure, properties and devices.
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Автор: Fukata Naoki, Rurali Riccardo Название: Fundamental Properties of Semiconductor Nanowires ISBN: 9811590524 ISBN-13(EAN): 9789811590528 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
Автор: Zhang Название: Nanowires ISBN: 331941979X ISBN-13(EAN): 9783319419794 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.
Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
