Fundamental Properties of Semiconductor Nanowires, Fukata Naoki, Rurali Riccardo
Автор: Fukata Naoki, Rurali Riccardo Название: Fundamental Properties of Semiconductor Nanowires ISBN: 9811590494 ISBN-13(EAN): 9789811590498 Издательство: Springer Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
Автор: Shadi A. Dayeh Название: Semiconductor Nanowires ISBN: 0128040165 ISBN-13(EAN): 9780128040164 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literatureContains a broad view, including examination of semiconductor nanowires
Автор: Consonni Vincent Название: Wide band gap semiconductor nanowires 2 ISBN: 1848216874 ISBN-13(EAN): 9781848216877 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Поставка под заказ.
Описание:
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.
Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
Автор: J Arbiol Название: Semiconductor Nanowires ISBN: 1782422536 ISBN-13(EAN): 9781782422532 Издательство: Elsevier Science Рейтинг: Цена: 38739.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology.
Описание: A timely reference from leading experts on semiconductor nanowires and their applications.
Автор: Amalio Fernandez-Pacheco Название: Studies of Nanoconstrictions, Nanowires and Fe3O4 Thin Films ISBN: 3642266967 ISBN-13(EAN): 9783642266966 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This work examines electrical and magnetic properties in nanometric materials with a range of scales: atomic-sized nanoconstrictions, micro- and nanowires and thin films. It describes an approach to tailoring magnetic and other properties of nanostructures.
Описание: This book summarizes the state of the art in the theoretical modeling of inorganic nanostructures. Extending the first edition, published in 2015, it presents applications to new nanostructured materials and theoretical explanations of recently discovered optical and thermodynamic properties of known nanomaterials.
Автор: Falcon Rich Название: Current Developments in Nanowires ISBN: 1632381095 ISBN-13(EAN): 9781632381095 Издательство: Неизвестно Цена: 25749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Zhang Название: Nanowires ISBN: 331941979X ISBN-13(EAN): 9783319419794 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.
Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Название: Nanowires ISBN: 1032283858 ISBN-13(EAN): 9781032283852 Издательство: Taylor&Francis Рейтинг: Цена: 21437.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This comprehensive resource covers fundamentals, recent progress, emerging applications, and future perspective of nanowires. It is essential reading for all academic and industry professionals working in the fields of chemistry, physics, materials science, energy, and nanotechnology.
Автор: Gott Название: Defects in Self-Catalysed III-V Nanowires ISBN: 3030940640 ISBN-13(EAN): 9783030940645 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
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