Автор: Horowitz Название: The Art of Electronics ISBN: 0521809266 ISBN-13(EAN): 9780521809269 Издательство: Cambridge Academ Рейтинг: Цена: 13622.00 р. Наличие на складе: Ожидается поступление.
Описание: At long last, here is the thoroughly revised and updated, and long-anticipated, third edition of the hugely successful The Art of Electronics. Widely accepted as the best single authoritative text on electronic circuit design, it will be an indispensable reference and the gold standard for anyone in the field.
Автор: Horowitz Paul Название: The art of electronics The x Chapters ISBN: 1108499945 ISBN-13(EAN): 9781108499941 Издательство: Cambridge Academ Рейтинг: Цена: 8870.00 р. Наличие на складе: Ожидается поступление.
Описание: The x-Chapters is the missing pieces of The Art of Electronics, to be used either as its complement, or as a direct route to exploring some of the most exciting and oft-overlooked topics in advanced electronic engineering. Students, researchers and practitioners will find here techniques and circuits that are unavailable elsewhere.
Описание: This book reviews developments in various emergent micro- and nanomaterials and their implementation in optical, infrared, and terahertz applications. The similarity, advantage, and limitation of each material is discussed and a comparative analysis of the various materials is offered.
Автор: Acharyya Aritra, Biswas Arindam, Das Palash Название: Generation, Detection and Processing of Terahertz Signals ISBN: 9811649464 ISBN-13(EAN): 9789811649462 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains detailed descriptions and associated discussions regarding different generation, detection and signal processing techniques for the electrical and optical signals within the THz frequency spectrum (0.3–10 THz). It includes detailed reviews of some recently developed electronic and photonic devices for generating and detecting THz waves, potential materials for implementing THz passive circuits, some newly developed systems and methods associated with THz wireless communication, THz antennas and some cutting-edge techniques associated with the THz signal and image processing. The book especially focuses on the recent advancements and several research issues related to THz sources, detectors and THz signal and image processing techniques; it also discusses theoretical, experimental, established and validated empirical works on these topics. The book caters to a very wide range of readers from basic science to technological experts as well as students.
Автор: Ghafoor Saim, Rehmani Mubashir Husain, Davy Alan Название: Next Generation Wireless Terahertz Communication Networks ISBN: 036743072X ISBN-13(EAN): 9780367430726 Издательство: Taylor&Francis Рейтинг: Цена: 18374.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the state-of-the-art literature and survey on different communication aspects of Terahertz band communication networks from channel model to network layer operations and also cover the novel techniques and protocols to address the challenges for different Terahertz applications.
Communications technology at a frequency range into Terahertz (THz) levels has attracted attention because it promises near-fibre-optic-speed wireless links for the 5G and post-5G world. Transmitter and receiver integrated circuits based on CMOS, which has the ability to realize such circuits with low power consumption at a low cost, are expected to become increasingly widespread, with much research into the underlying electronics currently underway.
This book describes recent research on terahertz CMOS design for high-speed wireless communication. The topics covered include fundamental technologies for terahertz CMOS design, amplifier design, physical design approaches, transceiver design, and future prospects. This concise source of key information, written by leading experts in the field, is intended for researchers and professional circuit designers working in RFIC and CMOS design for telecommunications.
Chapter 2 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part I: Large-Signal Characteristics (Dr. Aritra Acharyya)
Chapter 3 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part II: Avalanche Noise Characteristics (Dr. Aritra Acharyya)
Chapter 4 - RF Performance of Ultra Wide Band Gap HEMTs (Dr. T R Lenka)
Chapter 5 - Potentiality of Impact Avalanche Transit Time diode as Terahertz Source based on Group-IV and III-V semiconducting materials (Girish Chandra Ghivela)
Chapter 6 - Analysis of InN based Surrounded gate tunnel field effect transistor for terahertz applications (Dr. Nitai Paitya)
Chapter 7 - Thermoelectric Power in Heavily Doped Nano-Structures In The Presence of Terahertz Radiation (K P Ghatak)
Chapter 8 - Heterostructure Devices for THz Signal Recognition (Dr. Manas Chand)
Chapter 9 - Data transmission with Terahertz Communication Systems (Dr. Sudipta Das)
Chapter 10 - Advances in Terahertz Imaging (Dr. Arijit Saha)
Chapter 11 - Terahertz emission mechanisms in III-V semiconductors: The influence of isoelectronic dopants (Rajeev N. Kini and C. P. Vaisakh)
Chapter 12 - Group III - Nitride and other semiconductor for terahertz detector(Bijit Choudhuri and Aniruddha Mondal).
Название: Handbook of Terahertz Technologies ISBN: 9814613088 ISBN-13(EAN): 9789814613088 Издательство: Taylor&Francis Рейтинг: Цена: 21437.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has triggered the search for new uses of terahertz waves in many fields, such as bioscience, security, and information and communications technology.
The book covers some of the technical breakthroughs in terms of device technologies. It discusses not only the theoretical details and typical features of the technology described, but also some issues and challenges related to it. In addition, it is shown what can actually be done with the terahertz-wave technologies by introducing several successful demonstrations, such as wireless communications, industrial uses, remote sensing, chemical analysis, and 2D/3D imaging.
Описание: It includes advanced topics such as terahertz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by use of machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, THZ imaging system for security and surveillance.
Описание: The reader will find here a timely update on new THz sources and detection schemes as well as concrete applications to the detection of Explosives and CBRN.
Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.
The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.
This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.
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