Автор: Tiwari, Sandip Название: Nanoscale Device Physics ISBN: 0198759878 ISBN-13(EAN): 9780198759874 Издательство: Oxford Academ Рейтинг: Цена: 10296.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The primary advanced textbook for the teaching of science and engineering of nanoscale devices as used in the semiconductor, electronics, magnetics, optics and electromechanics industry.
Автор: Suresh C. Jain Название: Conducting Organic Materials and Devices,81 ISBN: 0127521909 ISBN-13(EAN): 9780127521909 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Conducting polymers were discovered in 1970s in Japan. Since this discovery, there has been a steady flow of new ideas, new understanding, new conducing polymer (organics) structures and devices with enhanced performance. Several breakthroughs have been made in the design and fabrication technology of the organic devices. Almost all properties, mechanical, electrical, and optical, are important in organics. This book describes the recent advances in these organic materials and devices.
Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Автор: Christopher Nebel Название: Thin-Film Diamond I ISBN: 0127521852 ISBN-13(EAN): 9780127521855 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Описание: Reviews the advances made of thin film diamond, a semiconductor that may one day rival silicon as the material of choice for electronics. This work covers topics such as: the results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, and more.
Автор: Robert Fairman Название: Semiconducting Chalcogenide Glass II,79 ISBN: 0127521887 ISBN-13(EAN): 9780127521886 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Описание: Chalcogenide glass is made up of many elements from the Chalcogenide group. This work presents a comprehensive survey of the properties of chalcogenide glass under various external impacts. It deals with the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).
Автор: Eicke R. Weber Название: Quantum Efficiency in Complex Systems, Part I,83 ISBN: 0123750423 ISBN-13(EAN): 9780123750426 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Поставка под заказ.
Описание: Reflecting the truly interdisciplinary nature of the field of semiconductor materials, this title is suitable for physicists, chemists, materials scientists, and device engineers in modern industry.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.
Автор: Pawade Vijay B., Dhoble Sanjay J., Swart Hendrik C. Название: Nanoscale Compound Semiconductors and their Optoelectronics Applications ISBN: 0128240628 ISBN-13(EAN): 9780128240625 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanoscale Compound Semiconductors and their Optoelectronics Applications provides the basic and fundamental properties of nanoscale compound semiconductors and their role in modern technological products. The book discusses all important properties of this important category of materials such as their optical properties, size-dependent properties, and tunable properties. Key methods are reviewed, including synthesis techniques and characterization strategies. The role of compound semiconductors in the advancement of energy efficient optoelectronics and solar cell devices is also discussed. The book also touches on the photocatalytic property of the materials by doping with graphene oxides--an emerging and new pathway.
Описание: Reflecting the interdisciplinary nature of Quantum Efficiency in Complex Systems, this title is of interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Автор: Ching-Hua Su Название: Vapor Crystal Growth and Characterization ISBN: 3030396541 ISBN-13(EAN): 9783030396541 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.
The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.
This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
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