Описание: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries.
Автор: Khanna, Vinod Kumar Название: Introductory Nanoelectronics ISBN: 0367504030 ISBN-13(EAN): 9780367504038 Издательство: Taylor&Francis Рейтинг: Цена: 6430.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This introductory text develops the reader`s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems.
Автор: Jia Liu Название: Biomimetics Through Nanoelectronics ISBN: 3319686089 ISBN-13(EAN): 9783319686080 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: He has also designed nanoelectronic networks into flexible, three-dimensional (3D) and macroporous architectures, which mimic the structure of tissue scaffolds for in vitro 3D integrations with synthetic tissues and in vivo implantation by means of syringe injection.
Описание: This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
Название: Nanoelectronics: physics, materials and devices ISBN: 0323918328 ISBN-13(EAN): 9780323918329 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Featuring an easy-to-learn and easy-to-use reference system acclaimed for more than five generations, the Thompson Chain-Reference Bible enables you to search the breadth of Scripture`s teachings on thousands of topics. Ideal for personal study and sermon preparation, it`s now easier to read with the NKJV Comfort Print typeface.
Автор: Kaul, Anupama B. Название: Microelectronics to Nanoelectronics ISBN: 1466509546 ISBN-13(EAN): 9781466509542 Издательство: Taylor&Francis Рейтинг: Цена: 31390.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Hassan Raza Название: Nanoelectronics Fundamentals ISBN: 3030325717 ISBN-13(EAN): 9783030325718 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the state of the art in the theoretical framework, computational modeling, and the fabrication and characterization of nanoelectronics devices. It addresses material properties, device physics, circuit analysis, system design, and a range of applications. A discussion on the nanoscale fabrication, characterization and metrology is also included. The book offers a valuable resource for researchers, graduate students, and senior undergraduate students in engineering and natural sciences, who are interested in exploring nanoelectronics from materials, devices, systems, and applications perspectives.
Автор: Majumder, Manoj Kumar (iiit, Chhattisgarh, India) Kumbhare, Vijay Rao (iiit, Naya Raipur, Chhattisgarh, India) Japa, Aditya (iiit, Naya Raipur, Chhatt Название: Introduction to microelectronics to nanoelectronics ISBN: 0367503247 ISBN-13(EAN): 9780367503246 Издательство: Taylor&Francis Рейтинг: Цена: 7042.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book:Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics.Includes HDL, and VLSI design going into the nanoelectronics arena.Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool.Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing.Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Автор: Fuccio Cristiano Antonino La Magna Название: Laser Annealing Processes in Semiconductor Technology ISBN: 0128202556 ISBN-13(EAN): 9780128202555 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering.
Описание: Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
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