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Nitride Semiconductor Devices - Fundamentals and Applications, Morkoc


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Автор: Morkoc
Название:  Nitride Semiconductor Devices - Fundamentals and Applications
ISBN: 9783527411016
Издательство: Wiley
Классификация:
ISBN-10: 3527411011
Обложка/Формат: Paperback
Страницы: 474
Вес: 1.02 кг.
Дата издания: 2013
Язык: English
Размер: 243 x 171 x 29
Читательская аудитория: Professional & vocational
Основная тема: Semiconductor Physics
Подзаголовок: Fundamentals and applications
Ссылка на Издательство: Link
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Поставляется из: Англии


Integrated Electronics on Aluminum Nitride

Автор: Chaudhuri
Название: Integrated Electronics on Aluminum Nitride
ISBN: 3031171985 ISBN-13(EAN): 9783031171987
Издательство: Springer
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Цена: 27950.00 р.
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Описание: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Epitaxial Growth of III-Nitride Compounds

Автор: Takashi Matsuoka; Yoshihiro Kangawa
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3030095428 ISBN-13(EAN): 9783030095420
Издательство: Springer
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Цена: 6986.00 р.
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Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

III-Nitride Ultraviolet Emitters

Автор: Michael Kneissl; Jens Rass
Название: III-Nitride Ultraviolet Emitters
ISBN: 3319371274 ISBN-13(EAN): 9783319371276
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components.

Epitaxial Growth of III-Nitride Compounds

Автор: Matsuoka
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3319766406 ISBN-13(EAN): 9783319766409
Издательство: Springer
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Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so.

Physics of Wurtzite Nitrides and Oxides

Автор: Bernard Gil
Название: Physics of Wurtzite Nitrides and Oxides
ISBN: 3319380834 ISBN-13(EAN): 9783319380834
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago.

Fundamentals of Semiconductor Fabrication

Автор: May
Название: Fundamentals of Semiconductor Fabrication
ISBN: 0471232793 ISBN-13(EAN): 9780471232797
Издательство: Wiley
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Цена: 24861.00 р.
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Описание: From crystal growth to integrated devices and circuits, this new book offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Автор: Hao, Yue
Название: Nitride Wide Bandgap Semiconductor Material and Electronic Devices
ISBN: 0367574365 ISBN-13(EAN): 9780367574369
Издательство: Taylor&Francis
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Цена: 6889.00 р.
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Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

Автор: Nakamura, Shuji
Название: Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
ISBN: 0748408363 ISBN-13(EAN): 9780748408368
Издательство: Taylor&Francis
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Цена: 35218.00 р.
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Group III-Nitride Semiconductor Optoelectronics

Автор: C. Jayant Praharaj
Название: Group III-Nitride Semiconductor Optoelectronics
ISBN: 111970863X ISBN-13(EAN): 9781119708636
Издательство: Wiley
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Цена: 18374.00 р.
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Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications

Автор: Huang Jian-Jang
Название: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications
ISBN: 0081014066 ISBN-13(EAN): 9780081014066
Издательство: Elsevier Science
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Цена: 32002.00 р.
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Описание: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

Nitride Wide Bandgap Semiconductor

Автор: Hao
Название: Nitride Wide Bandgap Semiconductor
ISBN: 1498745121 ISBN-13(EAN): 9781498745123
Издательство: Taylor&Francis
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Цена: 26796.00 р.
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Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

III-Nitride Based Light Emitting Diodes and Applications

Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor
Название: III-Nitride Based Light Emitting Diodes and Applications
ISBN: 9400758626 ISBN-13(EAN): 9789400758629
Издательство: Springer
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Цена: 20896.00 р.
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Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.


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