Epitaxial Growth of III-Nitride Compounds, Matsuoka
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642048285 ISBN-13(EAN): 9783642048289 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Miroslav Kotrla; Nicolas I. Papanicolaou; Dimitri Название: Atomistic Aspects of Epitaxial Growth ISBN: 1402006756 ISBN-13(EAN): 9781402006753 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Epitaxial growth lies at the heart of a range of industrial and technological applications. The contributions to this book are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems.
Описание: The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond. In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation.
Автор: Gertjan Koster Название: Epitaxial Growth Of Complex Metal Oxides ISBN: 1782422455 ISBN-13(EAN): 9781782422457 Издательство: Elsevier Science Рейтинг: Цена: 37055.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The atomic arrangement and subsequent properties of a material are determined by the type and conditions of growth leading to epitaxy, making control of these conditions key to the fabrication of higher quality materials. Epitaxial Growth of Complex Metal Oxides reviews the techniques involved in such processes and highlights recent developments in fabrication quality which are facilitating advances in applications for electronic, magnetic and optical purposes. Part One reviews the key techniques involved in the epitaxial growth of complex metal oxides, including growth studies using reflection high-energy electron diffraction, pulsed laser deposition, hybrid molecular beam epitaxy, sputtering processes and chemical solution deposition techniques for the growth of oxide thin films. Part Two goes on to explore the effects of strain and stoichiometry on crystal structure and related properties, in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films in Part Three.
Автор: Miroslav Kotrla; Nicolas I. Papanicolaou; Dimitri Название: Atomistic Aspects of Epitaxial Growth ISBN: 1402006748 ISBN-13(EAN): 9781402006746 Издательство: Springer Рейтинг: Цена: 38992.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Автор: G?nther Bauer; Wolfgang Richter Название: Optical Characterization of Epitaxial Semiconductor Layers ISBN: 364279680X ISBN-13(EAN): 9783642796807 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.
Автор: Oliver G. Schmidt Название: Lateral Alignment of Epitaxial Quantum Dots ISBN: 3642079911 ISBN-13(EAN): 9783642079917 Издательство: Springer Рейтинг: Цена: 36197.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning.
Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.
This thesis presents first observations of superconductivity in one- or two-atomic-scale thin layer materials. The thesis begins with a historical overview of superconductivity and the electronic structure of two-dimensional materials, and mentions that these key ingredients lead to the possibility of the two-dimensional superconductor with high phase-transition temperature and critical magnetic field. Thereafter, the thesis moves its focus onto the implemented experiments, in which mainly two different materials thallium-deposited silicon surfaces and metal-intercalated bilayer graphenes, are used. The study of the first material is the first experimental demonstration of both a gigantic Rashba effect and superconductivity in the materials supposed to be superconductors without spatial inversion symmetry. The study of the latter material is relevant to superconductivity in a bilayer graphene, which was a big experimental challenge for a decade, and has been first achieved by the author.
The description of the generic and innovative measurement technique, highly effective in probing electric resistivity of ultra-thin materials unstable in an ambient environment, makes this thesis a valuable source for researchers not only in surface physics but also in nano-materials science and other condensed-matter physics.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642263895 ISBN-13(EAN): 9783642263897 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Описание: This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics.
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