Описание: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Автор: Riko Radojcic Название: Managing More-than-Moore Integration Technology Development ISBN: 3030064956 ISBN-13(EAN): 9783030064952 Издательство: Springer Рейтинг: Цена: 4611.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program – but using a novelized form. The material is presented in a conversational format through a story that follows a fictional narrator as she grows from an intern to a manager in a (fictional) chip company. The story describes the technology development program from management, engineering and human perspectives, and exposes not only the management and technical issues but also the typical work-life balance challenges experienced by engineers working in the technology industry. Use of a series of realistic and representative vignettes, supported by a set of illustrative cartoon-ish panels, presents the serious management topics in a light and readable way.
Автор: Radojcic Название: Managing More-than-Moore Integration Technology Development ISBN: 3319927000 ISBN-13(EAN): 9783319927008 Издательство: Springer Рейтинг: Цена: 4611.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program - but using a novelized form.
Автор: Karlheinz Seeger Название: Semiconductor Physics ISBN: 3642060234 ISBN-13(EAN): 9783642060236 Издательство: Springer Рейтинг: Цена: 11753.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book, now in its ninth edition, still has the character of a textbook with the emphasis on "Physics." The volume has increased somewhat because several improvements have been made and some new items have been included. In Sect. 13. 2 the new Quantum Cascade Laser which covers the far in- frared spectral range has been added. In Sect. 14. 4 the theory of the quantum Hall effect is now based on ballistic transport which in a more general respect without referring to the then still unknown quantum Hall effect was consid- ered already by Rudolf Peierls. In the same chapter, the recent discovery of a low-temperature resistance oscillation in a very pure semiconductor under the influence of combined dc and ac electric fields in addition to a magnetic field is presented. Furthermore, quantum Hall effect observations with an unprece- dented high precision are remarkable and may give a new impetus to theory. A new Sect. 15. 5 presents information about coaxial carbon tubes of nanometer size diameter and how they are integrated as the current transporting element in a field effect transistor. In another new addition Sect. 15. 6 with the title Molecular Electronics, the current-voltage rectifying characteristics of an or- ganic Langmuir-Blodgett film of nanometer thickness is shown. These efforts serve to demonstrate where the ever decreasing size of electronic circuits may come to its natural limits. The system of units preferred here is the SI system.
Название: High-k gate dielectric materials ISBN: 1774638851 ISBN-13(EAN): 9781774638859 Издательство: Taylor&Francis Рейтинг: Цена: 12707.00 р. Наличие на складе: Поставка под заказ.
Описание: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
Название: High-k Gate Dielectric Materials ISBN: 1771888431 ISBN-13(EAN): 9781771888431 Издательство: Taylor&Francis Рейтинг: Цена: 18987.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
Описание: This book offers a thorough understanding of the applications of finite element method (FEM) to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Автор: Andrew B. Kahng; Gabriel Robins Название: On Optimal Interconnections for VLSI ISBN: 1441951458 ISBN-13(EAN): 9781441951458 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Recent minimum-delay constructions are highlighted, including provably good cost-radius tradeoffs, critical-sink routing algorithms, Elmore delay-optimal routing, graph Steiner arborescences, non-tree routing, and wiresizing.
Автор: Wilfried Sch?fer; Martin Wegener Название: Semiconductor Optics and Transport Phenomena ISBN: 3642082718 ISBN-13(EAN): 9783642082719 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Whenever a physicist visits the physics faculty in Dortmund, he/she is bound to hear the success story of the so-called integrated course, a four-semester introduction to physics. These lectures are given by two professors simulta- neously, one experimentalist and one theorist. After having asked the common question, "How many professors have killed each other?," the visitor usually realizes that this is an excellent way of presenting a coherent introductiorl to both experimental and theoretical physics. We decided to try this concept in an advanced course on semiconductor physics. At that point the typical student has already had an introductory course in solid-state physics and solid-state theory. The aim of the lectures was to repeat some of the most important, well-known classics of semiconductor optics and transport and eventually guide the students to topics of current interest in research. When preparing the lectures, we did not find a textbook addressing all these aspects: experiment and theory in semiconductor optics and transport- which made us write this book. This book presents the phenomenology and a simple, in- tuitive understanding of many effects and, in addition, attempts to explain the underlying physics on a consistent theoretical footing. Calculations are presented such that a student should be able to follow them with a pencil and a piece of paper.
Автор: Raif O. Onvural; Arne Nilsson Название: Local Area Network Interconnection ISBN: 1461362822 ISBN-13(EAN): 9781461362821 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the First International Conference held in Research Triangle Park, North Carolina, October 20-22, 1993
Автор: Guy Lemieux; David Lewis Название: Design of Interconnection Networks for Programmable Logic ISBN: 1441954155 ISBN-13(EAN): 9781441954152 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Programmable Logic Devices (PLDs) have become the key implementation medium for the vast majority of digital circuits designed today. This book focuses on that 90% that is the programmable routing: the manner in which the programmable wires are connected and the circuit design of the programmable switches themselves.
Автор: G.G. Harman; Pavel Mach Название: Microelectronic Interconnections and Assembly ISBN: 9401061599 ISBN-13(EAN): 9789401061599 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop, Prague, Czech Republic, 18-21 May 1996
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