Название: Infrared Detector Technologies ISBN: 142007671X ISBN-13(EAN): 9781420076714 Издательство: Taylor&Francis Цена: 32155.00 р. Наличие на складе: Поставка под заказ. Описание: Offers a broadly approachable treatment of the fundamental principles and developments in the science and technology of infrared detection. The author presents each topic with a brief summary of historical background followed by explanation of key principles underlying performance, overview of properties, and analysis of the advances.
Описание: This book reviews developments in various emergent micro- and nanomaterials and their implementation in optical, infrared, and terahertz applications. The similarity, advantage, and limitation of each material is discussed and a comparative analysis of the various materials is offered.
Автор: Acharyya Aritra, Biswas Arindam, Das Palash Название: Generation, Detection and Processing of Terahertz Signals ISBN: 9811649464 ISBN-13(EAN): 9789811649462 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains detailed descriptions and associated discussions regarding different generation, detection and signal processing techniques for the electrical and optical signals within the THz frequency spectrum (0.3–10 THz). It includes detailed reviews of some recently developed electronic and photonic devices for generating and detecting THz waves, potential materials for implementing THz passive circuits, some newly developed systems and methods associated with THz wireless communication, THz antennas and some cutting-edge techniques associated with the THz signal and image processing. The book especially focuses on the recent advancements and several research issues related to THz sources, detectors and THz signal and image processing techniques; it also discusses theoretical, experimental, established and validated empirical works on these topics. The book caters to a very wide range of readers from basic science to technological experts as well as students.
Автор: Zoran Jak?i? Название: Micro and Nanophotonics for Semiconductor Infrared Detectors ISBN: 3319096737 ISBN-13(EAN): 9783319096735 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers the first systematic approach to numerous different MEMS and nanotechnology-based methods available for the improvement of photonic infrared detectors and points out to a path towards uncooled operation with the performance of cryogenically cooled devices.
Описание: Chapter 1. Introduction to the Advanced Materials for Future Teraheretz Devices, Circuits and Systems.- Chapter 2. Gallium Nitride Based Solid-State Devices for Terahertz Applications.- Chapter 3. Noncontact Characterization Techniques of GaN-Based Terahertz Devices.- Chapter 4. A Brief Review on Terahertz Avalanche Transit Time Sources.- Chapter 5. Terahertz IMPATT Sources Based on Silicon Carbide.- Chapter 6. Terahertz Quantum Dot Intersublevel Photodetector.- Chapter 7. Graphene - A Promising Material for Realizing Active and Passive Terahertz Radiators.- Chapter 8. First-principle Molecular Dynamics Simulation of Terahertz Absorptive Hydrogenated TiO2 Nanoparticles.- Chapter 9. Doping Effects on Optical Properties of Titania Composite in Terahertz Range.- Chapter 10. Silicon Nanowires as a Potential Material for Terahertz Applications.- Chapter 11. Analysis of Optical Performance of Dual-order RAMAN Amplifier beyond 100 THz Spectrum.- Chapter 12. A Novel Approach Dual Material Double Gate Germanium based TFET.- Chapter 13. Sources and Security Issues in Terahertz Technologies.- Chapter 14. Interferometric Switch Based on Terahertz Optical Asymmetric Demultiplexer.- Chapter 15. Material Systems for Realizing Heterojunction IMPATT sources for Generating Terahertz Waves.
Автор: Rogalski, Antoni Название: 2D Materials for Infrared and Terahertz Detectors ISBN: 0367477416 ISBN-13(EAN): 9780367477417 Издательство: Taylor&Francis Рейтинг: Цена: 24499.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of emerging detectors` material-based performance and a comparison to traditional materials used in the fabrication of infrared and terahertz detectors.
Автор: Rogalski, Antoni Название: Infrared and terahertz detectors, third edition ISBN: 1032338660 ISBN-13(EAN): 9781032338668 Издательство: Taylor&Francis Рейтинг: Цена: 6889.00 р. Наличие на складе: Поставка под заказ.
Описание: This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding.
Автор: Rogalski, Antoni Название: 2d materials for infrared and terahertz detectors ISBN: 0367489740 ISBN-13(EAN): 9780367489748 Издательство: Taylor&Francis Рейтинг: Цена: 6889.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of emerging detectors` material-based performance and a comparison to traditional materials used in the fabrication of infrared and terahertz detectors.
Автор: Jiandong Sun Название: Field-effect Self-mixing Terahertz Detectors ISBN: 3662486792 ISBN-13(EAN): 9783662486795 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.
Chapter 2 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part I: Large-Signal Characteristics (Dr. Aritra Acharyya)
Chapter 3 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part II: Avalanche Noise Characteristics (Dr. Aritra Acharyya)
Chapter 4 - RF Performance of Ultra Wide Band Gap HEMTs (Dr. T R Lenka)
Chapter 5 - Potentiality of Impact Avalanche Transit Time diode as Terahertz Source based on Group-IV and III-V semiconducting materials (Girish Chandra Ghivela)
Chapter 6 - Analysis of InN based Surrounded gate tunnel field effect transistor for terahertz applications (Dr. Nitai Paitya)
Chapter 7 - Thermoelectric Power in Heavily Doped Nano-Structures In The Presence of Terahertz Radiation (K P Ghatak)
Chapter 8 - Heterostructure Devices for THz Signal Recognition (Dr. Manas Chand)
Chapter 9 - Data transmission with Terahertz Communication Systems (Dr. Sudipta Das)
Chapter 10 - Advances in Terahertz Imaging (Dr. Arijit Saha)
Chapter 11 - Terahertz emission mechanisms in III-V semiconductors: The influence of isoelectronic dopants (Rajeev N. Kini and C. P. Vaisakh)
Chapter 12 - Group III - Nitride and other semiconductor for terahertz detector(Bijit Choudhuri and Aniruddha Mondal).
Автор: Saroj Rout; Sameer Sonkusale Название: Active Metamaterials ISBN: 3319522183 ISBN-13(EAN): 9783319522180 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the theoretical background, experimental methods and implementation details to engineer for communication and imaging application, terahertz devices using metamaterials, in mainstream semiconductor foundry processes.
Автор: Rout Saroj, Sonkusale Sameer Название: Active Metamaterials: Terahertz Modulators and Detectors ISBN: 3319848526 ISBN-13(EAN): 9783319848525 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the theoretical background, experimental methods and implementation details to engineer for communication and imaging application, terahertz devices using metamaterials, in mainstream semiconductor foundry processes.
Автор: Sun Jiandong Название: Field-Effect Self-Mixing Terahertz Detectors ISBN: 3662569485 ISBN-13(EAN): 9783662569481 Издательство: Springer Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.
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