The Physics and Chemistry of Carbides, Nitrides and Borides, R. Freer
Автор: T. Y. Kosolapova Название: Carbides ISBN: 1468480081 ISBN-13(EAN): 9781468480085 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: valuable suggestions and constant help during the writing of the book, to Professor P. V. Gel'd for reading the manuscript and mak- ing valuable comments, and also to her colleagues in the Labora- tory for the Technology of Inorganic Compounds in the Institute for Problems in Materials Science of the Academy of Sciences of the Ukrainian SSR, in particular, to G. N. Makarenko, V. B. Fedorus, o. F. Kvas, and A. V. Tkachenko for assistance in planning the book and reading the manuscript. Contents Chapter I The Structure and Physi- chemical Properties of Carbides. . 1 Structures --. . . . . . . . . . . . . . -. -. . --. 1 Thermodynamic and thermophysical properties 22 Electrophysical and magnetic properties . . . . 30 Physicomechanical properties - . . - - . . . . . . 38 Chemical properties . . . . . . ---. . . --. -- 41 Chapter II Methods of Producing Carbides. . . 51 Chapter ITI Carbides of Metals of Group I -. . - 61 Carbides of the alkali metals . . . - . . - . - . . - 61 Carbides of metals of the copper subgroup. - - 66
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Описание: Carbide, Nitride and Boride Materials Synthesis and Processing is a major reference text addressing methods for the synthesis of non-oxides.
Автор: Alexey S. Kurlov; Aleksandr I. Gusev Название: Tungsten Carbides ISBN: 3319005235 ISBN-13(EAN): 9783319005232 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book embraces the entire range of problems associated with phase equilibria in "tungsten-carbon" binary system and related ternary systems, nonstoichiometry, disorder and order in different tungsten carbides, electronic and crystal structure and more.
Автор: Xie, Rong-jun Li, Yuan Qiang Hirosaki, Naoto Yamam Название: Nitride phosphors and solid state lighting ISBN: 1439830118 ISBN-13(EAN): 9781439830116 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nitride Phosphors and Solid-State Lighting provides an in-depth introduction to the crystal chemistry, synthesis, luminescence, and applications of phosphor materials for solid-state lighting, mainly focusing on new nitride phosphors. Drawing on their extensive experimental work, the authors offer a multidisciplinary study of phosphor materials that encompasses materials science, inorganic chemistry, solid-state chemistry, solid-state physics, optical spectroscopy, crystal field theory, and computational materials science.
The book begins with an introduction to the principles, semiconductor/phosphor materials, and characterizations of solid-state lighting and white light-emitting diodes (LEDs). It then discusses the optical and luminescence processes occurring in optically active centers of solid materials and presents the photoluminescence properties of traditional phosphors for white LEDs, including garnets, aluminates, silicates, sulfides, oxysulfides, phosphates, and scheelites.
The remainder of the text focuses on newly developed nitride phosphors. The authors describe the crystal chemistry of general nitride compounds, the crystal structure and photoluminescence properties of new nitride phosphors, and synthetic methods for preparing nitride phosphors. They detail the structural analysis of nitride phosphors and present experimental and computational results of typical nitride phosphors. The authors also examine key issues, such as excitation and emission spectra, thermal quenching, and quantum efficiency. The final chapter explores applications of nitride phosphors in white LEDs for general lighting and LCD backlight purposes.
Covering novel luminescent materials, this book brings you up to date on the evolving field of solid-state lighting. It illustrates the fundamentals, synthesis, properties, and applications of the latest nitride phosphor materials.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Автор: Dudley Название: Silicon Carbide 2008 — Materials, Processing and Devices ISBN: 1605110396 ISBN-13(EAN): 9781605110394 Издательство: Cambridge Academ Рейтинг: Цена: 13464.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
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