Описание: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
Автор: R. Freer Название: The Physics and Chemistry of Carbides, Nitrides and Borides ISBN: 9401074445 ISBN-13(EAN): 9789401074445 Издательство: Springer Рейтинг: Цена: 60933.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop, Manchester, UK, September 18-22, 1989
Автор: T. Y. Kosolapova Название: Carbides ISBN: 1468480081 ISBN-13(EAN): 9781468480085 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: valuable suggestions and constant help during the writing of the book, to Professor P. V. Gel'd for reading the manuscript and mak- ing valuable comments, and also to her colleagues in the Labora- tory for the Technology of Inorganic Compounds in the Institute for Problems in Materials Science of the Academy of Sciences of the Ukrainian SSR, in particular, to G. N. Makarenko, V. B. Fedorus, o. F. Kvas, and A. V. Tkachenko for assistance in planning the book and reading the manuscript. Contents Chapter I The Structure and Physi- chemical Properties of Carbides. . 1 Structures --. . . . . . . . . . . . . . -. -. . --. 1 Thermodynamic and thermophysical properties 22 Electrophysical and magnetic properties . . . . 30 Physicomechanical properties - . . - - . . . . . . 38 Chemical properties . . . . . . ---. . . --. -- 41 Chapter II Methods of Producing Carbides. . . 51 Chapter ITI Carbides of Metals of Group I -. . - 61 Carbides of the alkali metals . . . - . . - . - . . - 61 Carbides of metals of the copper subgroup. - - 66
Автор: S.T. Oyama Название: The Chemistry of Transition Metal Carbides and Nitrides ISBN: 9401071993 ISBN-13(EAN): 9789401071994 Издательство: Springer Рейтинг: Цена: 52243.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book arose from a symposium titled `Transition Metal Carbides and Nitrides: Preparation, Properties, and Reactivity` organized by Jae Sung Lee, Masatoshi Nagai and myself.
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Автор: Dudley Название: Silicon Carbide 2008 — Materials, Processing and Devices ISBN: 1605110396 ISBN-13(EAN): 9781605110394 Издательство: Cambridge Academ Рейтинг: Цена: 13464.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Автор: Stephen Saddow Название: Silicon Carbide Biotechnology ISBN: 0128029935 ISBN-13(EAN): 9780128029930 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "
Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, "provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications.
SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants.
This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions. Discusses the properties, processing, characterization, and application of silicon carbide biomedical materials and related technologyAssesses literature, patents, and FDA approvals for clinical trials, enabling rapid assimilation of data from current disparate sources and promoting the transition from technology R&D, to clinical trials Includes more on applications and devices, such as SiC nanowires, biofunctionalized devices, micro-electrode arrays, heart stent/cardiovascular coatings, and continuous glucose sensors, in this new edition
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