The Technology and Physics of Molecular Beam Epitaxy, E.H.C. Parker
Автор: Morton B. Panish; Henryk Temkin Название: Gas Source Molecular Beam Epitaxy ISBN: 3642781292 ISBN-13(EAN): 9783642781292 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented.
Автор: Marian A. Herman; Helmut Sitter Название: Molecular Beam Epitaxy ISBN: 3642800629 ISBN-13(EAN): 9783642800627 Издательство: Springer Рейтинг: Цена: 11101.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure.
Автор: T. Suntola; M. Simpson Название: Atomic Layer Epitaxy ISBN: 9401066612 ISBN-13(EAN): 9789401066617 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently GBP3 billion with projected annual growth of 20 to 30% [1].
Автор: G?nther Bauer; Wolfgang Richter Название: Optical Characterization of Epitaxial Semiconductor Layers ISBN: 364279680X ISBN-13(EAN): 9783642796807 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.
Автор: L.L. Chang; K. Ploog Название: Molecular Beam Epitaxy and Heterostructures ISBN: 940108744X ISBN-13(EAN): 9789401087445 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy (MBE) and Heterostructures, Erice, Italy, March 7-19, 1983
Автор: Marian A. Herman; Helmut Sitter Название: Molecular Beam Epitaxy ISBN: 3642971008 ISBN-13(EAN): 9783642971006 Издательство: Springer Рейтинг: Цена: 10448.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Foord Название: Chemical Beam Epitaxy and Related Techniques ISBN: 0471967483 ISBN-13(EAN): 9780471967484 Издательство: Wiley Рейтинг: Цена: 57333.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries.
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Автор: Roderick A.B. Devine Название: The Physics and Technology of Amorphous SiO2 ISBN: 1461283019 ISBN-13(EAN): 9781461283010 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987.
Описание: Written for all experts in this field, this book presents an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells.
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