Автор: Mohamed Abu Rahma; Mohab Anis Название: Nanometer Variation-Tolerant SRAM ISBN: 1493902202 ISBN-13(EAN): 9781493902200 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This essential reference combines state-of-the-art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It shows designers how to apply practical techniques that optimize memory yield.
Описание: This book covers a broad range of topics related to SRAM design and testing. It includes everything from SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing.
Автор: Koichiro Ishibashi; Kenichi Osada Название: Low Power and Reliable SRAM Memory Cell and Array Design ISBN: 3642270182 ISBN-13(EAN): 9783642270185 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Автор: Jawar Singh; Saraju P. Mohanty; Dhiraj K. Pradhan Название: Robust SRAM Designs and Analysis ISBN: 149390244X ISBN-13(EAN): 9781493902446 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This guide to Static Random Access Memory (SRAM) bitcell design and analysis meets the nano-regime challenges for CMOS devices and such emerging devices as Tunnel FETs. Offers popular SRAM bitcell topologies that mitigate variability, plus exhaustive analysis.
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