Описание: This book analyzes parametric amplification with emphasis on the MOS discrete-time implementation. Examples include a small gain amplifier, discrete-time mixer/IIR-Filter, and analog-to-digital converter. Offers experimental data validating the overall design.
Описание: This book is based on the 18 tutorials presented during the 23rd workshop on Advances in Analog Circuit Design.
Автор: Koichiro Ishibashi; Kenichi Osada Название: Low Power and Reliable SRAM Memory Cell and Array Design ISBN: 3642270182 ISBN-13(EAN): 9783642270185 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Автор: Vibhu Sharma; Francky Catthoor; Wim Dehaene Название: SRAM Design for Wireless Sensor Networks ISBN: 1489992154 ISBN-13(EAN): 9781489992154 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This reviews the most efficient circuit design techniques and trade-offs, and introduces new memory architecture techniques, sense amplifier circuits and voltage optimization methods for reducing the impact of variability in wireless sensor applications.
Автор: Oleg Semenov; Hossein Sarbishaei; Manoj Sachdev Название: ESD Protection Device and Circuit Design for Advanced CMOS Technologies ISBN: 9048178363 ISBN-13(EAN): 9789048178360 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device and circuit simulators is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance.
Описание: This book offers a technology-oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Coverage includes transient threshold voltage variations and integration of tunnel transistors in a multi-gage process.
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