Автор: Carlo Jacoboni; Paolo Lugli Название: The Monte Carlo Method for Semiconductor Device Simulation ISBN: 3709174538 ISBN-13(EAN): 9783709174531 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Описание: Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.
Автор: Dietmar Schroeder Название: Modelling of Interface Carrier Transport for Device Simulation ISBN: 370917368X ISBN-13(EAN): 9783709173688 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Описание: Analog Design and Simulation using OrCAD Capture and PSpice provides step-by-step instructions on how to use the Cadence/OrCAD family of Electronic Design Automation software for analog design and simulation. Organized into 22 chapters, each with exercises at the end, it explains how to start Capture and set up the project type and libraries for PSpice simulation. It also covers the use of AC analysis to calculate the frequency and phase response of a circuit and DC analysis to calculate the circuits bias point over a range of values. The book describes a parametric sweep, which involves sweeping a parameter through a range of values, along with the use of Stimulus Editor to define transient analog and digital sources. It also examines the failure of simulations due to circuit errors and missing or incorrect parameters, and discusses the use of Monte Carlo analysis to estimate the response of a circuit when device model parameters are randomly varied between specified tolerance limits according to a specified statistical distribution. Other chapters focus on the use of worst-case analysis to identify the most critical components that will affect circuit performance, how to add and create PSpice models, and how the frequency-related signal and dispersion losses of transmission lines affect the signal integrity of high-speed signals via the transmission lines. Practitioners, researchers, and those interested in using the Cadence/OrCAD professional simulation software to design and analyze electronic circuits will find the information, methods, compounds, and experiments described in this book extremely useful.
Описание: Constitutes the refereed proceedings of the 15th International Workshop on Power and Timing Optimization and Simulation, PATMOS 2005, held in Leuven, Belgium in September 2005. The 74 full papers presented were organized in topical sections on low-power processors, code optimization for low-power, high-level design, low-power circuits, and more.
Автор: Carlo Jacoboni; Paolo Lugli Название: The Monte Carlo Method for Semiconductor Device Simulation ISBN: 3211821104 ISBN-13(EAN): 9783211821107 Издательство: Springer Рейтинг: Цена: 28734.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Описание: This book covers in a textbook-like fashion the basics or organic solar cells, addressing the limits of photovoltaic energy conversion and giving a well-illustrated introduction to molecular electronics with focus on the working principle and characterization of organic solar cells.
Автор: J.S. Yuan; Juin Jei Liou Название: Semiconductor Device Physics and Simulation ISBN: 0306457245 ISBN-13(EAN): 9780306457241 Издательство: Springer Рейтинг: Цена: 28734.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Provides coverage of modern semiconductor devices - including hetero- and homo-junction devices - using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results. It is suitable for device physics to practical device design.
Автор: P. Antognetti; D.A. Antoniadis; Robert W. Dutton; Название: Process and Device Simulation for MOS-VLSI Circuits ISBN: 9400968442 ISBN-13(EAN): 9789400968448 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982
Автор: Thoma, J. Bouamama, B.ould Название: Modelling and simulation in thermal and chemical engineering ISBN: 3642085660 ISBN-13(EAN): 9783642085666 Издательство: Springer Рейтинг: Цена: 11753.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The main object of this advanced textbook is modelling and simulation of energetic processes by bond graphs. But even without knowledge of this powerful method, it can be used to a certain extent as an introduction to simulation in thermodynamics.
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