Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1493944827 ISBN-13(EAN): 9781493944828 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1461468213 ISBN-13(EAN): 9781461468219 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.
Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.
Автор: Ioannis Kymissis Название: Organic Field Effect Transistors ISBN: 1441947116 ISBN-13(EAN): 9781441947116 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes Название: Matching Properties of Deep Sub-Micron MOS Transistors ISBN: 1441937188 ISBN-13(EAN): 9781441937186 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.
Описание: The book summarizes Ting Lei`s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication.
Автор: Juras Pozela Название: Physics of High-Speed Transistors ISBN: 0306446197 ISBN-13(EAN): 9780306446191 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Examines the physical principles and technological approaches that make high-speed transistors possible. This book includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits.
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