This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.
Автор: Vsevolod F. Kiselev; Oleg V. Krylov Название: Adsorption Processes on Semiconductor and Dielectric Surfaces I ISBN: 3642820530 ISBN-13(EAN): 9783642820533 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book deals with various physical and chemical phenomena associated with the interaction of a solid surface in a gaseous environment. A great deal of attention is paid to considering th~ nature of ac- tive surface sites responsible for chemisorption, catalytic conversion of adsorbed molecules, and certain electronic surface phenomena.
Автор: Helmut Dosch Название: Critical Phenomena at Surfaces and Interfaces ISBN: 3662149753 ISBN-13(EAN): 9783662149751 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book deals with the application of grazing angle x-rayand neutron scattering to the study of surface-inducedcritical phenomena.
Название: Semiconductor interfaces: formation and properties ISBN: 364272969X ISBN-13(EAN): 9783642729690 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.
Автор: H.W.M Salemink; M.D. Pashley Название: Semiconductor Interfaces at the Sub-Nanometer Scale ISBN: 0792323971 ISBN-13(EAN): 9780792323976 Издательство: Springer Рейтинг: Цена: 30467.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Contains review papers in the fields of semiconductor growth, analysis and device structures. This book provides reviews of the development in the theoretical and experimental treatment of epitaxial growth, and electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces.
Автор: Winfried M?nch Название: Electronic Properties of Semiconductor Interfaces ISBN: 3642057780 ISBN-13(EAN): 9783642057786 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces.
Автор: Luth, Hans Название: Solid surfaces, interfaces and thin films ISBN: 3642264867 ISBN-13(EAN): 9783642264863 Издательство: Springer Рейтинг: Цена: 11099.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Solid Surfaces, Interfaces and Thin Films examines both experimental and theoretical aspects of surface, interface and thin film physics. Coverage of magnetic thin films has been expanded, and now includes giant magnetoresistance and the spin-transfer torque mechanism.
Автор: G.J. Davies; R.H. Williams Название: Semiconductor Growth, Surfaces and Interfaces ISBN: 0412577305 ISBN-13(EAN): 9780412577307 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Bring together several diverse but related topics concerned with semiconductor growth. This text is suitable for those studying semiconductor growth from any perspective, and also those in the semiconductor industry, whether in applications or in manufacturing.
Описание: The instability of these properties and their uncon- trollable alterations with temperature and under the influence of environmental conditions result in a lack of stability in the performance of semiconductor devices, hence the high percentage of waste in their industrial production.
Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.
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