Описание: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices.
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Автор: Winfried M?nch Название: Semiconductor Surfaces and Interfaces ISBN: 3642087485 ISBN-13(EAN): 9783642087486 Издательство: Springer Рейтинг: Цена: 32651.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Автор: Kevin F. Brennan Название: Theory of Modern Electronic Semiconductor Devices ISBN: 0471415413 ISBN-13(EAN): 9780471415411 Издательство: Wiley Рейтинг: Цена: 24702.00 р. Наличие на складе: Поставка под заказ.
Описание: A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors.
Автор: Inder P. Batra Название: Metallization and Metal-Semiconductor Interfaces ISBN: 1461280869 ISBN-13(EAN): 9781461280866 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held at the Technical University of Munich, Garching, Germany, August 22-26, 1988
Описание: The theoretical understanding of transport properties of semiconductor structures on short length and short time scales, and in the nonlinear high-field regime is of particular relevance for electronic and optoelectronic materials. This work presents an overview of theoretical methods, results, and applications in the field.
Название: Semiconductor interfaces: formation and properties ISBN: 364272969X ISBN-13(EAN): 9783642729690 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.
Автор: Ulrike Woggon Название: Optical Properties of Semiconductor Quantum Dots ISBN: 3662148129 ISBN-13(EAN): 9783662148129 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: After providing the reader with a theoretical background, the author illustrates the specific properties of three-dimensionally confined semiconductors, such as the size dependence of energy states, optical transitions, and dephasing mechanisms with the results from numerous experiments in linear and nonlinear spectroscopy.
Описание: Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au- tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation.
Автор: G.J. Davies; R.H. Williams Название: Semiconductor Growth, Surfaces and Interfaces ISBN: 0412577305 ISBN-13(EAN): 9780412577307 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Bring together several diverse but related topics concerned with semiconductor growth. This text is suitable for those studying semiconductor growth from any perspective, and also those in the semiconductor industry, whether in applications or in manufacturing.
Описание: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
