Plasma Processes for Semiconductor Fabrication, Hitchon W. Nicholas G.
Автор: Grasser Tibor, Selberherr Siegfried Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007 ISBN: 3211728600 ISBN-13(EAN): 9783211728604 Издательство: Springer Рейтинг: Цена: 25853.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.
Автор: May Название: Fundamentals of Semiconductor Fabrication ISBN: 0471232793 ISBN-13(EAN): 9780471232797 Издательство: Wiley Рейтинг: Цена: 24861.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: From crystal growth to integrated devices and circuits, this new book offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence.
Автор: Van Zant Peter Название: Microchip Fabrication: A Practical Guide to Semiconductor Pr ISBN: 0071821015 ISBN-13(EAN): 9780071821018 Издательство: McGraw-Hill Рейтинг: Цена: 25395.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Fully revised to cover the latest advances in the field, this new edition explains every stage of semiconductor processing, from raw material preparation to testing to packaging and shipping the finished device. Detailed illustrations and real-world examples are included.
Автор: Dimitris Tsoukalas; Christos Tsamis Название: Simulation of Semiconductor Processes and Devices 2001 ISBN: 3709172780 ISBN-13(EAN): 9783709172780 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens.
Автор: Kristin De Meyer; Serge Biesemans Название: Simulation of Semiconductor Processes and Devices 1998 ISBN: 3211832084 ISBN-13(EAN): 9783211832080 Издательство: Springer Рейтинг: Цена: 29209.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices. This volume provides an open forum for the presentation of the results and trends in modeling and simulation of semiconductor equipment, processes and devices.
Автор: Siegfried Selberherr; Hannes Stippel; Ernst Strass Название: Simulation of Semiconductor Devices and Processes ISBN: 3709173728 ISBN-13(EAN): 9783709173725 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With the increasing need for better models and improved understand- ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en- gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Автор: Heiner Ryssel; Peter Pichler Название: Simulation of Semiconductor Devices and Processes ISBN: 3709173639 ISBN-13(EAN): 9783709173633 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Technology computer-aided design, or TCAD, is critical to today's semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Описание: Making processing information more energy-efficient saves money, reduces energy use, and permits batteries that provide power in mobile devices to run longer or be smaller. The book addresses the need to investigate new approaches to lower energy requirement in computing, communication, and sensing.
Автор: Posseme, Nicolas Название: Plasma Etching Processes for CMOS Devices Realization ISBN: 1785480960 ISBN-13(EAN): 9781785480966 Издательство: Elsevier Science Рейтинг: Цена: 9348.00 р. Наличие на складе: Нет в наличии.
Описание: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.
Автор: Tibor Grasser; Siegfried Selberherr Название: Simulation of Semiconductor Processes and Devices 2007 ISBN: 3709119111 ISBN-13(EAN): 9783709119112 Издательство: Springer Рейтинг: Цена: 25853.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria.
Автор: Kristin De Meyer; Serge Biesemans Название: Simulation of Semiconductor Processes and Devices 1998 ISBN: 3709174155 ISBN-13(EAN): 9783709174159 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
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