Simulation of Semiconductor Processes and Devices 1998, Kristin De Meyer; Serge Biesemans

Автор: Tibor Grasser; Siegfried Selberherr
Название: Simulation of Semiconductor Processes and Devices 2007
ISBN: 3709119111 ISBN-13(EAN): 9783709119112
Издательство: Springer
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Описание: This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria.

Автор: Gerhard Wachutka; Gabriele Schrag
Название: Simulation of Semiconductor Processes and Devices 2004
ISBN: 3709172128 ISBN-13(EAN): 9783709172124
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Описание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Автор: Heiner Ryssel; Peter Pichler
Название: Simulation of Semiconductor Devices and Processes
ISBN: 3709173639 ISBN-13(EAN): 9783709173633
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Автор: S. Selberherr
Название: Analysis and Simulation of Semiconductor Devices
ISBN: 3709187540 ISBN-13(EAN): 9783709187548
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Описание: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded.

Автор: Kristin De Meyer; Serge Biesemans
Название: Simulation of Semiconductor Processes and Devices 1998
ISBN: 3211832084 ISBN-13(EAN): 9783211832080
Издательство: Springer
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Описание: Contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices. This volume provides an open forum for the presentation of the results and trends in modeling and simulation of semiconductor equipment, processes and devices.

Автор: Dimitris Tsoukalas; Christos Tsamis
Название: Simulation of Semiconductor Processes and Devices 2001
ISBN: 3709172780 ISBN-13(EAN): 9783709172780
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Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens.

Автор: Siegfried Selberherr; Hannes Stippel; Ernst Strass
Название: Simulation of Semiconductor Devices and Processes
ISBN: 3709173728 ISBN-13(EAN): 9783709173725
Издательство: Springer
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Описание: With the increasing need for better models and improved understand- ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en- gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Автор: Robert W. Dutton; Zhiping Yu
Название: Technology CAD — Computer Simulation of IC Processes and Devices
ISBN: 0792393791 ISBN-13(EAN): 9780792393795
Издательство: Springer
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Описание: 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ...

Автор: Robert W. Dutton; Zhiping Yu
Название: Technology CAD — Computer Simulation of IC Processes and Devices
ISBN: 1461364086 ISBN-13(EAN): 9781461364085
Издательство: Springer
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Описание: 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ...

Автор: J.S. Yuan; Juin Jei Liou
Название: Semiconductor Device Physics and Simulation
ISBN: 0306457245 ISBN-13(EAN): 9780306457241
Издательство: Springer
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Описание: Provides coverage of modern semiconductor devices - including hetero- and homo-junction devices - using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results. It is suitable for device physics to practical device design.

Автор: Carlo Jacoboni; Paolo Lugli
Название: The Monte Carlo Method for Semiconductor Device Simulation
ISBN: 3709174538 ISBN-13(EAN): 9783709174531
Издательство: Springer
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Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.