Simulation of Semiconductor Processes and Devices 2004, Gerhard Wachutka; Gabriele Schrag

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Автор: Dimitris Tsoukalas; Christos Tsamis
Название: Simulation of Semiconductor Processes and Devices 2001
ISBN: 3709172780 ISBN-13(EAN): 9783709172780
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Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens.

Автор: Tibor Grasser; Siegfried Selberherr
Название: Simulation of Semiconductor Processes and Devices 2007
ISBN: 3709119111 ISBN-13(EAN): 9783709119112
Издательство: Springer
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Описание: This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria.

Автор: Kristin De Meyer; Serge Biesemans
Название: Simulation of Semiconductor Processes and Devices 1998
ISBN: 3211832084 ISBN-13(EAN): 9783211832080
Издательство: Springer
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Описание: Contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices. This volume provides an open forum for the presentation of the results and trends in modeling and simulation of semiconductor equipment, processes and devices.

Автор: Kristin De Meyer; Serge Biesemans
Название: Simulation of Semiconductor Processes and Devices 1998
ISBN: 3709174155 ISBN-13(EAN): 9783709174159
Издательство: Springer
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Автор: Siegfried Selberherr; Hannes Stippel; Ernst Strass
Название: Simulation of Semiconductor Devices and Processes
ISBN: 3709173728 ISBN-13(EAN): 9783709173725
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Описание: With the increasing need for better models and improved understand- ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en- gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Автор: Heiner Ryssel; Peter Pichler
Название: Simulation of Semiconductor Devices and Processes
ISBN: 3709173639 ISBN-13(EAN): 9783709173633
Издательство: Springer
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Автор: S. Selberherr
Название: Analysis and Simulation of Semiconductor Devices
ISBN: 3709187540 ISBN-13(EAN): 9783709187548
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Описание: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded.

Автор: Randolph Bank; R. Bulirsch; H. Gajewski; K. Merten
Название: Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices
ISBN: 3034896654 ISBN-13(EAN): 9783034896658
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Описание: Progress in today`s high-technology industries is strongly associated with the development of new mathematical tools. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation.

Автор: Robert W. Dutton; Zhiping Yu
Название: Technology CAD — Computer Simulation of IC Processes and Devices
ISBN: 0792393791 ISBN-13(EAN): 9780792393795
Издательство: Springer
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Описание: 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ...

Автор: Robert W. Dutton; Zhiping Yu
Название: Technology CAD — Computer Simulation of IC Processes and Devices
ISBN: 1461364086 ISBN-13(EAN): 9781461364085
Издательство: Springer
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Описание: 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ...

Автор: Carlo Jacoboni; Paolo Lugli
Название: The Monte Carlo Method for Semiconductor Device Simulation
ISBN: 3709174538 ISBN-13(EAN): 9783709174531
Издательство: Springer
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Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.