Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications, Niccolo Rinaldi, Michael Schroter
Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Introduction.- Useful material parameters.- Manufacturing.- Concepts.- Problems and challenges.- Measurement techniques.- Simulation.- Long term stability and degradation.- State of the Art.- Silicon based heterojunction solar cells in China.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1493945726 ISBN-13(EAN): 9781493945726 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
Автор: Ahmet Bindal; Sotoudeh Hamedi-Hagh Название: Silicon Nanowire Transistors ISBN: 331927175X ISBN-13(EAN): 9783319271750 Издательство: Springer Рейтинг: Цена: 11179.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology`s true potential for the next generation VLSI.
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
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