Advanced indium arsenide-based hemt architectures for terahertz applications,
Автор: Omar Wing Название: Gallium Arsenide Digital Circuits ISBN: 1461288266 ISBN-13(EAN): 9781461288268 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance are also derived.
Описание: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys.
Автор: Kim Young-Soon Название: Gallium Arsenide on Silicon Substrate ISBN: 0530006464 ISBN-13(EAN): 9780530006468 Издательство: Неизвестно Рейтинг: Цена: 12139.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Das Sudipta, Anveshkumar N., Dutta Joydeep Название: Advances in Terahertz Technology and Its Applications ISBN: 9811657300 ISBN-13(EAN): 9789811657306 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights the growing applications of THz technology and various modules used for their successful realization.
Chapter 2 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part I: Large-Signal Characteristics (Dr. Aritra Acharyya)
Chapter 3 - Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources - Part II: Avalanche Noise Characteristics (Dr. Aritra Acharyya)
Chapter 4 - RF Performance of Ultra Wide Band Gap HEMTs (Dr. T R Lenka)
Chapter 5 - Potentiality of Impact Avalanche Transit Time diode as Terahertz Source based on Group-IV and III-V semiconducting materials (Girish Chandra Ghivela)
Chapter 6 - Analysis of InN based Surrounded gate tunnel field effect transistor for terahertz applications (Dr. Nitai Paitya)
Chapter 7 - Thermoelectric Power in Heavily Doped Nano-Structures In The Presence of Terahertz Radiation (K P Ghatak)
Chapter 8 - Heterostructure Devices for THz Signal Recognition (Dr. Manas Chand)
Chapter 9 - Data transmission with Terahertz Communication Systems (Dr. Sudipta Das)
Chapter 10 - Advances in Terahertz Imaging (Dr. Arijit Saha)
Chapter 11 - Terahertz emission mechanisms in III-V semiconductors: The influence of isoelectronic dopants (Rajeev N. Kini and C. P. Vaisakh)
Chapter 12 - Group III - Nitride and other semiconductor for terahertz detector(Bijit Choudhuri and Aniruddha Mondal).
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Автор: Omar Wing Название: Gallium Arsenide Digital Circuits ISBN: 0792390814 ISBN-13(EAN): 9780792390817 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance are also derived.
Автор: Matteo Perenzoni; Douglas J. Paul Название: Physics and Applications of Terahertz Radiation ISBN: 9401779155 ISBN-13(EAN): 9789401779159 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the latest research results on techniques employed to manage Terahertz (THz) radiation, and reviews its potential uses. The four sections of the book cover THz Detectors, THz Sources, Components and Systems, and Applications.
Автор: Rogalski, Antoni Название: 2D Materials for Infrared and Terahertz Detectors ISBN: 0367477416 ISBN-13(EAN): 9780367477417 Издательство: Taylor&Francis Рейтинг: Цена: 24499.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of emerging detectors` material-based performance and a comparison to traditional materials used in the fabrication of infrared and terahertz detectors.
Автор: Andrey D. Grigorev Название: Terahertz Electronics ISBN: 1527554325 ISBN-13(EAN): 9781527554320 Издательство: Cambridge Scholars Рейтинг: Цена: 8742.00 р. Наличие на складе: Нет в наличии.
Описание: The book describes distinctive features of the terahertz radiation interaction with various materials, including the Earth`s atmosphere, liquids, dielectrics, superconductors, semiconductors, metals and 2D-structures.
Описание: This book examines characterization and evaluation of a semi-large aperture photoconducting antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate as a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.
Автор: J.M. Chamberlain; R.E. Miles Название: New Directions in Terahertz Technology ISBN: 0792345371 ISBN-13(EAN): 9780792345374 Издательство: Springer Рейтинг: Цена: 41647.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A detailed study of the science, engineering and applications of terahertz technology, based on room-temperature solid-state devices, which are seen as the key technology for wider applications in this frequency range. The relative merits of electronic and optical devices are discussed and new device principles identified.
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