Автор: Stephen J. Pearton; Cammy R. Abernathy; Fan Ren Название: Gallium Nitride Processing for Electronics, Sensors and Spintronics ISBN: 1849969655 ISBN-13(EAN): 9781849969659 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.
Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three of the world's leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Автор: Omar Wing Название: Gallium Arsenide Digital Circuits ISBN: 1461288266 ISBN-13(EAN): 9781461288268 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance are also derived.
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642263895 ISBN-13(EAN): 9783642263897 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642048285 ISBN-13(EAN): 9783642048289 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: R?diger Quay Название: Gallium Nitride Electronics ISBN: 3642090982 ISBN-13(EAN): 9783642090981 Издательство: Springer Рейтинг: Цена: 28732.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics;
Автор: A.J. Downs Название: Chemistry of Aluminium, Gallium, Indium and Thallium ISBN: 9401049602 ISBN-13(EAN): 9789401049603 Издательство: Springer Рейтинг: Цена: 36570.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The same preoccupation with boron is apparent in the coverage received by the Group 13 elements in the comprehensive and regularly updated volume of the Gmelin Handbook. Thisbook seeks to redress the balance with a definitive, wide-rangingand up-to-date review of the chemistry of the Group 13 metals aluminium, gallium, indium and thallium.
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