Описание: transistor reordering, decoupling cells, Schmitt Trigger, and sleep transistor) as alternatives to attenuate the unwanted effects on FinFET logic cells.
Автор: Kaushik, Brajesh Kumar Название: Spacer Engineered FinFET Architectures ISBN: 0367573555 ISBN-13(EAN): 9780367573553 Издательство: Taylor&Francis Рейтинг: Цена: 7501.00 р. Наличие на складе: Поставка под заказ.
Автор: Ramkaj Название: Multi-Gigahertz Nyquist Analog-to-Digital Converters ISBN: 3031227085 ISBN-13(EAN): 9783031227080 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter’ building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy – speed – power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy – speed – power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies. The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies. * Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification; * Describes novel methods and techniques to push the accuracy – speed – power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits’ trade-offs across the entire ADC chain; * Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies; * Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.
Автор: Chauhan,Yogesh Singh Название: Finfet Modeling For Ic Simulation And Design ISBN: 0124200311 ISBN-13(EAN): 9780124200319 Издательство: Elsevier Science Рейтинг: Цена: 11115.00 р. Наличие на складе: Поставка под заказ.
Автор: Saha, Samar K. Название: FinFET Devices for VLSI Circuits and Systems ISBN: 1138586099 ISBN-13(EAN): 9781138586093 Издательство: Taylor&Francis Рейтинг: Цена: 22202.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book provides the basic theory and operating principles of FinFET devices and technology. Accordingly, the book systematically presents an overview of FinFET device architecture and manufacturing processes, detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing.
Описание: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.
Описание: transistor reordering, decoupling cells, Schmitt Trigger, and sleep transistor) as alternatives to attenuate the unwanted effects on FinFET logic cells.
Автор: J.-P. Colinge Название: FinFETs and Other Multi-Gate Transistors ISBN: 1441944095 ISBN-13(EAN): 9781441944092 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.
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