Characterization Of Semiconductor Heterostructures And Nanostructures, Agostini, Giovanni
Автор: Consonni Vincent Название: Wide band gap semiconductor nanowires 2 ISBN: 1848216874 ISBN-13(EAN): 9781848216877 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Поставка под заказ.
Описание:
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.
Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Автор: L.L. Chang; K. Ploog Название: Molecular Beam Epitaxy and Heterostructures ISBN: 940108744X ISBN-13(EAN): 9789401087445 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy (MBE) and Heterostructures, Erice, Italy, March 7-19, 1983
Описание: The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy.
Synthesis, Modelling and Characterization of 2D Materials and Their Heterostructures provides a detailed discussion on the multiscale computational approach surrounding atomic, molecular and atomic-informed continuum models. In addition to a detailed theoretical description, this book provides example problems, sample code/script, and a discussion on how theoretical analysis provides insight into optimal experimental design. Furthermore, the book addresses the growth mechanism of these 2D materials, the formation of defects, and different lattice mismatch and interlayer interactions. Sections cover direct band gap, Raman scattering, extraordinary strong light matter interaction, layer dependent photoluminescence, and other physical properties.
Описание: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures.
Описание: Heterostructures, made by growing several ultrathin layers of different materials on silicon substrates, have remarkable properties not shared by bulk materials. This book examines the theoretical basis and experimental knowledge underlying our understanding of the electronic and optical properties of semiconductor heterostructures.
Описание: The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy.
Описание: This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity.
Автор: Mitin Vladimir V., Mitin V. V., Kochelap Viacheslav Название: Quantum Heterostructures: Microelectronics and Optoelectronics ISBN: 0521636353 ISBN-13(EAN): 9780521636353 Издательство: Cambridge Academ Рейтинг: Цена: 15523.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behaviour and operating features of modern microelectronic and optoelectronic devices.
This thesis focuses on the energy band engineering of graphene. It presents pioneering findings on the controlled growth of graphene and graphene-based heterostructures, as well as scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) studies on their electronic structures. The thesis primarily investigates two classes of graphene-based systems: (i) twisted bilayer graphene, which was synthesized on Rh substrates and manifests van Hove singularities near Fermi Level, and (ii) in-plane h-BN-G heterostructures, which were controllably synthesized in an ultrahigh vacuum chamber and demonstrate intriguing electronic properties on the interface. In short, the thesis offers revealing insights into the energy band engineering of graphene-based nanomaterials, which will greatly facilitate future graphene applications.
Описание: This thesis explores an amazing family of oxide compounds - the nickelates - known for their metal-to-insulator transition and, in the case of LaNiO3, to be a possible building block for designing a synthetic high Tc superconductor. Competition between various fascinating phases makes these materials very sensitive to external parameters and it is thus possible to dramatically tune their properties. This work on ultrathin LaNiO3 and the solid solution Nd1-xLaxNiO3 has important implications for the search for superconductivity in this class of materials.
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