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Handbook Of Self Assembled Semiconductor Nanostructures For Novel Devices In Photonics And Electronics, Henini, Mohamed


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Автор: Henini, Mohamed
Название:  Handbook Of Self Assembled Semiconductor Nanostructures For Novel Devices In Photonics And Electronics
ISBN: 9780080463254
Издательство: Elsevier Science
Классификация:
ISBN-10: 0080463258
Обложка/Формат: Hardback
Страницы: 864
Вес: 1.53 кг.
Дата издания: 25.07.2008
Язык: English
Размер: 244 x 165 x 51
Читательская аудитория: Professional & vocational
Основная тема: Mechani Eng PEG
Ссылка на Издательство: Link
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Поставляется из: Европейский союз
Описание: In 1969, Leo Esaki (1973 Nobel Laureate) and Ray Tsu from IBM, USA, proposed research on `man-made crystals` using a semiconductor superlattice. This title brings together various factors which are essential in self-organisation of quantum nanostructures. It reviews the status of research and development in self-organised nanostructured materials.


Автор: Rudan
Название: Springer Handbook of Semiconductor Devices
ISBN: 3030798267 ISBN-13(EAN): 9783030798260
Издательство: Springer
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Цена: 45735.00 р.
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Описание: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Fundamentals of Semiconductor Lasers

Автор: Takahiro Numai
Название: Fundamentals of Semiconductor Lasers
ISBN: 4431551476 ISBN-13(EAN): 9784431551478
Издательство: Springer
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Цена: 18284.00 р.
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Low Threshold Organic Semiconductor Lasers

Автор: Yue Wang
Название: Low Threshold Organic Semiconductor Lasers
ISBN: 3319012665 ISBN-13(EAN): 9783319012667
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book focuses on the development of miniature plastic lasers that can be powered by LEDs and the application of these lasers as highly sensitive sensors for vapors of nitroaromatic explosives.

Process Technology for Semiconductor Lasers

Автор: Kenichi Iga; Susumu Kinoshita
Название: Process Technology for Semiconductor Lasers
ISBN: 3642795781 ISBN-13(EAN): 9783642795787
Издательство: Springer
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Цена: 14365.00 р.
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Описание: A description of the design principles, seen mainly from the fabrication point of view. Following a review of the historical development and of the materials used in lasing at short to long wavelengths, the book goes on to discuss the basic design principles for semiconductor-laser devices and the epitaxy for laser production.

Semiconductor Laser Engineering, Reliability and Diagnostics - A Practical Approach to High Power and Single Mode Devices

Автор: Epperlein
Название: Semiconductor Laser Engineering, Reliability and Diagnostics - A Practical Approach to High Power and Single Mode Devices
ISBN: 1119990335 ISBN-13(EAN): 9781119990338
Издательство: Wiley
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Цена: 15040.00 р.
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Single Frequency Semiconductor Lasers

Автор: Zujie Fang; Haiwen Cai; Gaoting Chen; Ronghui Qu
Название: Single Frequency Semiconductor Lasers
ISBN: 9811353522 ISBN-13(EAN): 9789811353529
Издательство: Springer
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Цена: 27950.00 р.
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Описание: This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors.

Wide band gap semiconductor nanowires 2

Автор: Consonni Vincent
Название: Wide band gap semiconductor nanowires 2
ISBN: 1848216874 ISBN-13(EAN): 9781848216877
Издательство: Wiley
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Цена: 22010.00 р.
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Описание:

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

Semiconductor Devices and Integrated Electronics

Автор: A. G. Milnes
Название: Semiconductor Devices and Integrated Electronics
ISBN: 9401170231 ISBN-13(EAN): 9789401170239
Издательство: Springer
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Цена: 13974.00 р.
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Описание: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica- tions.

Gallium Nitride (GaN)

Название: Gallium Nitride (GaN)
ISBN: 1482220032 ISBN-13(EAN): 9781482220032
Издательство: Taylor&Francis
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Цена: 33686.00 р.
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Описание:

Addresses a Growing Need for High-Power and High-Frequency Transistors

Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.

Explores Recent Progress in High-Frequency GaN Technology

Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.

In addition, the authors:

  • Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
  • Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
  • Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
  • Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers

A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Capture and Relaxation in Self-Assembled Semiconductor Quantum Dots: The Dot and its Environment

Автор: Robson Ferreira, Gerald Bastard
Название: Capture and Relaxation in Self-Assembled Semiconductor Quantum Dots: The Dot and its Environment
ISBN: 1681740257 ISBN-13(EAN): 9781681740256
Издательство: Mare Nostrum (Eurospan)
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Цена: 6930.00 р.
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Описание: This is an overview of different models and mechanisms developed to describe the capture and relaxation of carriers in quantum-dot systems. Despite their undisputed importance, the mechanisms leading to population and energy exchanges between a quantum dot and its environment are not yet fully understood. The authors develop a first-order approach to such effects, using elementary quantum mechanics and an introduction to the physics of semiconductors. The book results from a series of lectures given by the authors at the Master’s level.

Quantum States And Scattering In Semiconductor Nanostructures

Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast
Название: Quantum States And Scattering In Semiconductor Nanostructures
ISBN: 1786343029 ISBN-13(EAN): 9781786343024
Издательство: World Scientific Publishing
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Цена: 9504.00 р.
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Описание:

This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.

Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.

Quantum States And Scattering In Semiconductor Nanostructures

Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast
Название: Quantum States And Scattering In Semiconductor Nanostructures
ISBN: 1786343010 ISBN-13(EAN): 9781786343017
Издательство: World Scientific Publishing
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Цена: 15523.00 р.
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Описание:

This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.

Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.


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