Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642263895 ISBN-13(EAN): 9783642263897 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Stephen J. Pearton; Cammy R. Abernathy; Fan Ren Название: Gallium Nitride Processing for Electronics, Sensors and Spintronics ISBN: 1849969655 ISBN-13(EAN): 9781849969659 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.
Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three of the world's leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Автор: R?diger Quay Название: Gallium Nitride Electronics ISBN: 3642090982 ISBN-13(EAN): 9783642090981 Издательство: Springer Рейтинг: Цена: 28732.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics;
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642048285 ISBN-13(EAN): 9783642048289 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Описание: GaN and related compounds and devices represent one of the most exciting research fields at the moment, due in part to the prospects of general lighting. Professor Morko? has published a book on the topic with Springer in 1999 (163 USD, 1,000 copies sold, reprint of 500, still in print). These days, the field is much more mature, and a good deal more is known about the topic than was known eight years ago. In addition, the field has expanded considerably due to wide-ranging applications. Thus, a comprehensive handbook that holds the properties, technology, and science of nitrides as well as the devices based on them is required by the community. NB: This book was under contract with Springer and due to be published this year. The author fell out with Springer though (mainly to do with production issues, language polishing etc.) and finally withdrew the project. There is an official letter from Springer confirming this fact.
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
Описание: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
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