Silicon, Germanium, and Their Alloys, Sitek, Arkadiusz
Автор: Nayfeh, Ammar (Professor, Khalifa University, Abu Dhabi, United Arab Emirates) Abdul Hadi, Sabina (Assistant Professor, University of Dubai, Dubai, United Arab Emirates) Название: Silicon-Germanium Alloys for Photovoltaic Applications ISBN: 0323856306 ISBN-13(EAN): 9780323856300 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A potty party`s coming through! Celebrate the milestone of potty training with this energetic board book that features a diverse group of children as they ditch their diapers and flush like big kids do.
Автор: E. Kasper; D.J. Paul Название: Silicon Quantum Integrated Circuits ISBN: 3642060382 ISBN-13(EAN): 9783642060380 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation.
Описание: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Автор: Maiti, C.K Название: Applications of Silicon-Germanium Heterostructure Devices ISBN: 0750307234 ISBN-13(EAN): 9780750307239 Издательство: Taylor&Francis Рейтинг: Цена: 39811.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Автор: I. C. Brownridge Название: Lithium-Drifted Germanium Detectors: Their Fabrication and Use ISBN: 1461346002 ISBN-13(EAN): 9781461346005 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N).
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
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