Second Order Non-linear Optics of Silicon and Silicon Nanostructures, Aktsipetrov, O. A.
Автор: Nobuyoshi Koshida Название: Device Applications of Silicon Nanocrystals and Nanostructures ISBN: 1489977376 ISBN-13(EAN): 9781489977373 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This comprehensive, up-to-date book systematically covers recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important. The chapters include a number of examples of device applications.
Автор: Gagik G Et Al Gurzadyan Название: Ultrafast dynamics in molecules, nanostructures and interfaces ISBN: 9814556912 ISBN-13(EAN): 9789814556910 Издательство: World Scientific Publishing Цена: 16949.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Primary events in natural systems or devices occur on extremely short time scales, and yet determine in many cases the final performance or output. For this reason research in ultrafast science is of primary importance and impact in both fundamental research as well as its applications. This book reviews the advances in the field, addressing timely and open questions such as the role of quantum coherence in biology, the role of excess energy in electron injection at photovoltaic interfaces or the dynamics in quantum confined structures (e.g. multi carrier generation). The approach is that of a monograph, with a broad tutorial introduction and an overview of the recent results. This volume includes selected lectures presented at Symposium on Ultrafast Dynamics of the 7th International Conference on Materials for Advanced Technologies.
Автор: Schuster Название: Diffractive Optics for Thin-Film Silicon Solar Cells ISBN: 3319442775 ISBN-13(EAN): 9783319442778 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This thesis introduces a figure of merit for light trapping with photonic nanostructures and shows how different light trapping methods compare, irrespective of material, absorber thickness or type of nanostructure. It provides an overview of the essential aspects of light trapping, offering a solid basis for future designs.
Light trapping with photonic nanostructures is a powerful method of increasing the absorption in thin film solar cells. Many light trapping methods have been studied, but to date there has been no comprehensive figure of merit to compare these different methods quantitatively. This comparison allows us to establish important design rules for highly performing structures; one such rule is the structuring of the absorber layer from both sides, for which the authors introduce a novel and simple layer-transfer technique. A closely related issue is the question of plasmonic vs. dielectric nanostructures; the authors present an experimental demonstration, aided by a detailed theoretical assessment, highlighting the importance of considering the multipass nature of light trapping in a thin film, which is an essential effect that has been neglected in previous work and which allows us to quantify the parasitic losses.
Автор: Ohtsu Название: Silicon Light-Emitting Diodes and Lasers ISBN: 3319420127 ISBN-13(EAN): 9783319420127 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.
Описание: A tribute to the eminent scholar, Professor Richard Kounai Chang, on his retirement from Yale University on June 12, 2008. It covers topics that span a diverse scope in applied optics frontiers, many of which are rooted in Professor Chang`s research.
Автор: Aktsipetrov O. A., Baranova I. M., Evtyukhov K. N. Название: Second Order Non-Linear Optics of Silicon and Silicon Nanostructures ISBN: 1498724159 ISBN-13(EAN): 9781498724159 Издательство: Taylor&Francis Рейтинг: Цена: 29093.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors.
The book contains six chapters that focus on:
The physical properties and linear optics of silicon
Basic theoretical concepts of reflected second harmonics (RSH)
The authors' theory of the generation of RSH at the non-linear medium-linear medium interface
An analytical review of work on the non-linear optics of silicon
The results of non-linear optical studies of silicon nanostructures
A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation
The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.
Название: Nanoscale Silicon Devices ISBN: 113874932X ISBN-13(EAN): 9781138749320 Издательство: Taylor&Francis Рейтинг: Цена: 9645.00 р. Наличие на складе: Поставка под заказ.
Описание: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Автор: Mahdi Nikdast Название: Silicon Photonics for High Performance Computing and Beyond ISBN: 0367262142 ISBN-13(EAN): 9780367262143 Издательство: Taylor&Francis Рейтинг: Цена: 25265.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents a comprehensive overview of the current state-of-the-art technology and research achievements in applying silicon photonics for communication and computation. It focuses on various design, development, and integration challenges, reviews the latest advances spanning materials, devices, circuits, systems, and applications.
Автор: Vivien Laurent, Pavesi Lorenzo Название: Handbook of Silicon Photonics ISBN: 0367576481 ISBN-13(EAN): 9780367576486 Издательство: Taylor&Francis Рейтинг: Цена: 7348.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With many illustrations, including some in color, this handbook provides an up-to-date reference to the broad and rapidly changing area of silicon photonics. It shows how basic science and innovative technological applications are pushing the field forward. Suitable for both specialists and newcomers, the book covers a broad spectrum of material
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