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Silicon Earth, 


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Название:  Silicon Earth
ISBN: 9781498708258
Издательство: Taylor&Francis
Классификация:

ISBN-10: 1498708250
Обложка/Формат: Paperback
Страницы: 617
Вес: 1.32 кг.
Дата издания: 07.12.2015
Язык: English
Издание: 2 ed
Иллюстрации: 2 tables, black and white; 557 illustrations, color
Размер: 181 x 330 x 36
Подзаголовок: Introduction to microelectronics and nanotechnology, second edition
Ссылка на Издательство: Link
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Поставляется из: Европейский союз


      Старое издание

Rare-Earth Implanted MOS Devices for Silicon Photonics

Автор: Lars Rebohle; Wolfgang Skorupa
Название: Rare-Earth Implanted MOS Devices for Silicon Photonics
ISBN: 3642265588 ISBN-13(EAN): 9783642265587
Издательство: Springer
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Цена: 18167.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.

Electrical Design of Through Silicon Via

Автор: Manho Lee; Jun So Pak; Joungho Kim
Название: Electrical Design of Through Silicon Via
ISBN: 940177949X ISBN-13(EAN): 9789401779494
Издательство: Springer
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Цена: 16977.00 р.
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Описание: This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity and thermal integrity.

Silicon-Containing Dendritic Polymers

Автор: Petar R. Dvornic; Michael J Owen
Название: Silicon-Containing Dendritic Polymers
ISBN: 9048177928 ISBN-13(EAN): 9789048177929
Издательство: Springer
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Цена: 26120.00 р.
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Описание: This is the first book to solely focus on silicon-containing dendritic polymers. The contributions of those experts who originally introduced each field or played a major role in its progress are reported. Developments in all major areas are presented.

Silicon-Germanium Strained Layers and Heterostructures,

Автор: M. Willander
Название: Silicon-Germanium Strained Layers and Heterostructures,
ISBN: 0127521836 ISBN-13(EAN): 9780127521831
Издательство: Elsevier Science
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Цена: 29476.00 р.
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Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.

VLSI: Integrated Systems on Silicon

Автор: Ricardo A. Reis; Luc Claesen
Название: VLSI: Integrated Systems on Silicon
ISBN: 0412823705 ISBN-13(EAN): 9780412823701
Издательство: Springer
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Цена: 43184.00 р.
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Описание: VLSI (very large scale integration) technology is evolving to the point where complete systems are being integrated on a single chip, including ASICs, sensors and actuators. This book discusses issues such as: VLSI systems on a chip; electronic design automation; ultra low voltage and low power; automatic synthesis; and, VLSI applications.

Electrochemistry of Silicon and its Oxide

Автор: Zhang Xiaoge Gregory
Название: Electrochemistry of Silicon and its Oxide
ISBN: 0306465418 ISBN-13(EAN): 9780306465413
Издательство: Springer
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Цена: 26122.00 р.
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Описание: The importance of electrochemistry in silicon technology has spurred intense research activity in the last five decades, resulting in a tremendous amount of experimental data and theoretical formulations. This book is a compilation and digestion of this body of information with a comprehensive collection of concrete data on the electrochemical properties of silicon, thorough characterization and analysis of the diverse phenomena of silicon electrodes, and systematic integration of concepts and theories on the reaction mechanisms. Covering all the scientific aspects and engineering applications involved in the silicon/liquid interface, this large body of information will be highly valuable for the current and future progress of the silicon science and technology.

Silicon Nanoelectronics

Автор: Oda
Название: Silicon Nanoelectronics
ISBN: 0824726332 ISBN-13(EAN): 9780824726331
Издательство: Taylor&Francis
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Цена: 33686.00 р.
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Описание: Technological advancement in chip development, based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. This work takes a look at the development of novel devices and materials that hold great promise for the creation of still smaller and powerful chips.

Data Transmission at Millimeter Waves

Автор: Khaled Khalaf; Vojkan Vidojkovic; Piet Wambacq; Jo
Название: Data Transmission at Millimeter Waves
ISBN: 3662509474 ISBN-13(EAN): 9783662509470
Издательство: Springer
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Цена: 13059.00 р.
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Описание: This book describes the design of a receiver front-end circuit for operation in the 60GHz range in 90nm CMOS. Physical layout of the test circuit and post-layout simulations for the implementation of a test chip including the QVCO and the first stage divider are also presented.

Phonon Thermal Transport in Silicon-Based Nanomaterials

Автор: Hai-Peng Li; Rui-Qin Zhang
Название: Phonon Thermal Transport in Silicon-Based Nanomaterials
ISBN: 9811326363 ISBN-13(EAN): 9789811326363
Издательство: Springer
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Цена: 7685.00 р.
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Описание: In this Brief, authors introduce the advance in theoretical and experimental techniques for determining the thermal conductivity in nanomaterials, and focus on review of their recent theoretical studies on the thermal properties of silicon–based nanomaterials, such as zero–dimensional silicon nanoclusters, one–dimensional silicon nanowires, and graphenelike two–dimensional silicene. The specific subject matters covered include: size effect of thermal stability and phonon thermal transport in spherical silicon nanoclusters, surface effects of phonon thermal transport in silicon nanowires, and defects effects of phonon thermal transport in silicene. The results obtained are supplemented by numerical calculations, presented as tables and figures. The potential applications of these findings in nanoelectrics and thermoelectric energy conversion are also discussed. In this regard, this Brief represents an authoritative, systematic, and detailed description of the current status of phonon thermal transport in silicon–based nanomaterials. This Brief should be a highly valuable reference for young scientists and postgraduate students active in the fields of nanoscale thermal transport and silicon-based nanomaterials.

Handbook of Photovoltaic Silicon

Автор: Deren Yang
Название: Handbook of Photovoltaic Silicon
ISBN: 3662564726 ISBN-13(EAN): 9783662564721
Издательство: Springer
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Цена: 104815.00 р.
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Описание: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Handbook of Porous Silicon

Автор: Leigh Canham
Название: Handbook of Porous Silicon
ISBN: 3319713809 ISBN-13(EAN): 9783319713809
Издательство: Springer
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Цена: 69876.00 р.
Наличие на складе: Поставка под заказ.

Описание: This handbook updates the most fast-moving research areas of porous silicon research, introduces a range of brand new topics not reviewed before and is even more inclusive of worldwide centres of expertise. Rapid advances are being made in porous silicon anodes for lithium batteries, biodegradable nanoparticles and nanoneedles for medical therapy and imaging, energetics and bio-diagnostic techniques. A number of additional characterization and processing techniques are also reviewed for the first time. Experts from 10 additional countries are involved in the 2nd edition: China, Vietnam, Singapore, Malaysia, Saudi Arabia, Turkey, Netherlands, Switzerland, Belarus, and Brazil, making more than 40 countries in total. The handbook therefore covers expertise from every continent. Another new feature is a review dedicated to industrial activity. This second edition endeavours to provide the community with a truly comprehensive database and up-to-date commentary on this versatile nanostructured material.

CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections

Автор: Jing Wang
Название: CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections
ISBN: 9811333777 ISBN-13(EAN): 9789811333774
Издательство: Springer
Рейтинг:
Цена: 13974.00 р.
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Описание: This book discusses some research results for CMOS-compatible silicon-based optical devices and interconnections. With accurate simulation and experimental demonstration, it provides insights on silicon-based modulation, advanced multiplexing, polarization and efficient coupling controlling technologies, which are widely used in silicon photonics. Researchers, scientists, engineers and especially students in the field of silicon photonics can benefit from the book. This book provides valuable knowledge, useful methods and practical design that can be considered in emerging silicon-based optical interconnections and communications. And it also give some guidance to student how to organize and complete an good dissertation.


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