Автор: Lars Rebohle; Wolfgang Skorupa Название: Rare-Earth Implanted MOS Devices for Silicon Photonics ISBN: 3642265588 ISBN-13(EAN): 9783642265587 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.
Автор: Manho Lee; Jun So Pak; Joungho Kim Название: Electrical Design of Through Silicon Via ISBN: 940177949X ISBN-13(EAN): 9789401779494 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity and thermal integrity.
Автор: Deepak Dasalukunte; Viktor ?wall; Fredrik Rusek; J Название: Faster than Nyquist Signaling ISBN: 3319354604 ISBN-13(EAN): 9783319354606 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book addresses the challenges and design trade-offs arising during the hardware design of Faster-than-Nyquist (FTN) signaling transceivers.
Автор: Petar R. Dvornic; Michael J Owen Название: Silicon-Containing Dendritic Polymers ISBN: 9048177928 ISBN-13(EAN): 9789048177929 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This is the first book to solely focus on silicon-containing dendritic polymers. The contributions of those experts who originally introduced each field or played a major role in its progress are reported. Developments in all major areas are presented.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Нет в наличии.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Автор: Oda Название: Silicon Nanoelectronics ISBN: 0824726332 ISBN-13(EAN): 9780824726331 Издательство: Taylor&Francis Рейтинг: Цена: 33686.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Technological advancement in chip development, based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. This work takes a look at the development of novel devices and materials that hold great promise for the creation of still smaller and powerful chips.
Автор: Yong Ping Xu Название: MEMS Silicon Oscillating Accelerometers and Readout Circuits ISBN: 877022045X ISBN-13(EAN): 9788770220453 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Most MEMS accelerometers on the market today are capacitive accelerometers that are based on the displacement sensing mechanism. This book is intended to cover recent developments of MEMS silicon oscillating accelerometers (SOA), also referred to as MEMS resonant accelerometer. As contrast to the capacitive accelerometer, the MEMS SOA is based on the force sensing mechanism, where the input acceleration is converted to a frequency output. MEMS Silicon Oscillating Accelerometers and Readout Circuits consists of six chapters and covers both MEMS sensor and readout circuit, and provides an in-depth coverage on the design and modelling of the MEMS SOA with several recently reported prototypes. The book is not only useful to researchers and engineers who are familiar with the topic, but also appeals to those who have general interests in MEMS inertial sensors. The book includes extensive references that provide further information on this topic.
Автор: Ricardo A. Reis; Luc Claesen Название: VLSI: Integrated Systems on Silicon ISBN: 0412823705 ISBN-13(EAN): 9780412823701 Издательство: Springer Рейтинг: Цена: 43184.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: VLSI (very large scale integration) technology is evolving to the point where complete systems are being integrated on a single chip, including ASICs, sensors and actuators. This book discusses issues such as: VLSI systems on a chip; electronic design automation; ultra low voltage and low power; automatic synthesis; and, VLSI applications.
Автор: Zhang Xiaoge Gregory Название: Electrochemistry of Silicon and its Oxide ISBN: 0306465418 ISBN-13(EAN): 9780306465413 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The importance of electrochemistry in silicon technology has spurred intense research activity in the last five decades, resulting in a tremendous amount of experimental data and theoretical formulations. This book is a compilation and digestion of this body of information with a comprehensive collection of concrete data on the electrochemical properties of silicon, thorough characterization and analysis of the diverse phenomena of silicon electrodes, and systematic integration of concepts and theories on the reaction mechanisms. Covering all the scientific aspects and engineering applications involved in the silicon/liquid interface, this large body of information will be highly valuable for the current and future progress of the silicon science and technology.
Автор: Khaled Khalaf; Vojkan Vidojkovic; Piet Wambacq; Jo Название: Data Transmission at Millimeter Waves ISBN: 3662509474 ISBN-13(EAN): 9783662509470 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes the design of a receiver front-end circuit for operation in the 60GHz range in 90nm CMOS. Physical layout of the test circuit and post-layout simulations for the implementation of a test chip including the QVCO and the first stage divider are also presented.
Описание: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Автор: Hai-Peng Li; Rui-Qin Zhang Название: Phonon Thermal Transport in Silicon-Based Nanomaterials ISBN: 9811326363 ISBN-13(EAN): 9789811326363 Издательство: Springer Рейтинг: Цена: 7685.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In this Brief, authors introduce the advance in theoretical and experimental techniques for determining the thermal conductivity in nanomaterials, and focus on review of their recent theoretical studies on the thermal properties of silicon–based nanomaterials, such as zero–dimensional silicon nanoclusters, one–dimensional silicon nanowires, and graphenelike two–dimensional silicene. The specific subject matters covered include: size effect of thermal stability and phonon thermal transport in spherical silicon nanoclusters, surface effects of phonon thermal transport in silicon nanowires, and defects effects of phonon thermal transport in silicene. The results obtained are supplemented by numerical calculations, presented as tables and figures. The potential applications of these findings in nanoelectrics and thermoelectric energy conversion are also discussed. In this regard, this Brief represents an authoritative, systematic, and detailed description of the current status of phonon thermal transport in silicon–based nanomaterials. This Brief should be a highly valuable reference for young scientists and postgraduate students active in the fields of nanoscale thermal transport and silicon-based nanomaterials.
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