Описание: Disorders of the Hand describes the techniques for diagnosis applicable to the various disorders of the hand and how evidence based findings influence clinical practice.
Автор: N. Hannay Название: Defects in Solids ISBN: 1468408313 ISBN-13(EAN): 9781468408317 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Yet, even though the role of chemistry in the solid-state sciences has been a vital one and the solid-state sciences have, in turn, made enormous contributions to chemical thought, solid-state chemistry has not been recognized by the general body of chemists as a major subfield of chemistry.
Автор: Steger, Michael Название: Transition-metal defects in silicon ISBN: 364235078X ISBN-13(EAN): 9783642350788 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Heslehurst Rikard Benton Название: Defects and Damage in Composite Materials and Structures ISBN: 146658047X ISBN-13(EAN): 9781466580473 Издательство: Taylor&Francis Рейтинг: Цена: 33686.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The advantages of composite materials include a high specific strength and stiffness, formability, and a comparative resistance to fatigue cracking and corrosion. However, not forsaking these advantages, composite materials are prone to a wide range of defects and damage that can significantly reduce the residual strength and stiffness of a structure or result in unfavorable load paths.
Emphasizing defect identification and restitution, Defects and Damage in Composite Materials and Structures explains how defects and damage in composite materials and structures impact composite component performance. Providing ready access to an extensive, descriptive list of defects and damage types, this must-have reference:
Examines defect criticality in composite structures
Recommends repair actions to restore structural integrity
Discusses failure modes and mechanisms of composites due to defects
Reviews NDI processes for finding and identifying defects in composite materials
Relating defect detection methods to defect type, the author merges his experience in the field of in-service activities for composite airframe maintenance and repair with indispensable reports and articles on defects and damage in advanced composite materials from the last 50 years.
Автор: M. Eric Gershwin; Bruce Merchant Название: Immunologic Defects in Laboratory Animals 1 ISBN: 1475703279 ISBN-13(EAN): 9781475703276 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The obligate dependence of animals upon the functional integrity of their immunologic systems is illus- trated by the ready invasion of ubiquitous organisms when the host is in a state of immune defense derangement.
Автор: Wu W. K. Название: Defects in Boron Ion Implanted Silicon ISBN: 1288823053 ISBN-13(EAN): 9781288823055 Издательство: Неизвестно Рейтинг: Цена: 10658.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: B.K. Tanner Название: Characterization of Crystal Growth Defects by X-Ray Methods ISBN: 147571128X ISBN-13(EAN): 9781475711288 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.
Автор: Giorgio Benedek Название: Point and Extended Defects in Semiconductors ISBN: 146845711X ISBN-13(EAN): 9781468457117 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
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