Автор: Jacques Jupille; Geoff Thornton Название: Defects at Oxide Surfaces ISBN: 3319380192 ISBN-13(EAN): 9783319380193 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides.
Автор: Johann-Martin Spaeth; J?rgen R. Niklas; Ralph H. B Название: Structural Analysis of Point Defects in Solids ISBN: 3642844073 ISBN-13(EAN): 9783642844072 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Strutural Analysis of Point Defects in Solids introduces theprinciples and techniques of modern electron paramagneticresonance (EPR) spectroscopy essentialfor applications tothe determination of microscopic defectstructures.
Автор: Cristian Teodosiu Название: Elastic Models of Crystal Defects ISBN: 354011226X ISBN-13(EAN): 9783540112266 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: for the computation of the elastic states of dislocation loops by means of straight dislocation data. Chapter III presents the main results obtained so far in describing non-linear effects in the elastic field of straight dislocations, as well as in the study of the core configuration of dislocations by using semidiscrete methods. Chapter IV is devoted to the linear and non-linear theory of continuous distri- butions of dislocations and to its application to investigating the influence of dislo- cations on crystal density and on the low-temperature thermal conductivity of crystals. Chapter V deals with the modelling of point defects as rigid or elastic inclusions l in an elastic matrix, or as force nultipoles. Finally, some of the results Q)ailable on the interactions between point defects and other crystal defects are briefly reviewed. Although the material in the text covers mainly the mathematical theory of crystal defects, the author has been constantly concerned with emphasizing the phYSical significance of the results and some of their possible applications. The reader can easily enlarge his information in these directions by reference to the stan- dard books on crystal defects by Cottrell {84J, Read {275J, Friedel 124J, Kroner 190J, van Bueren {365J, Indenbom {167J, Nabarro {258J, Hirth and Lathe 162J, or to the review articles by Seeger 286 J, Eshelby {Ill J, de Wit 385 J, and Bullough 50].
Описание: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals, and also on their kinetics and transformations under annealing.
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