Defects at Oxide Surfaces, Jacques Jupille; Geoff Thornton

Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral
Название: Point Defects in Semiconductors and Insulators
ISBN: 3540426957 ISBN-13(EAN): 9783540426950
Издательство: Springer
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Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.

Автор: Kipp van Schooten
Название: Optically Active Charge Traps and Chemical Defects in Semiconducting Nanocrystals Probed by Pulsed Optically Detected Magnetic Resonance
ISBN: 331903328X ISBN-13(EAN): 9783319033280
Издательство: Springer
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Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.

Автор: Steger, Michael
Название: Transition-metal defects in silicon
ISBN: 364235078X ISBN-13(EAN): 9783642350788
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.

Автор: J. Friedel; M. Lannoo
Название: Point Defects in Semiconductors I
ISBN: 3642815766 ISBN-13(EAN): 9783642815768
Издательство: Springer
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Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.

Автор: Cristian Teodosiu
Название: Elastic Models of Crystal Defects
ISBN: 354011226X ISBN-13(EAN): 9783540112266
Издательство: Springer
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Описание: for the computation of the elastic states of dislocation loops by means of straight dislocation data. Chapter III presents the main results obtained so far in describing non-linear effects in the elastic field of straight dislocations, as well as in the study of the core configuration of dislocations by using semidiscrete methods. Chapter IV is devoted to the linear and non-linear theory of continuous distri- butions of dislocations and to its application to investigating the influence of dislo- cations on crystal density and on the low-temperature thermal conductivity of crystals. Chapter V deals with the modelling of point defects as rigid or elastic inclusions l in an elastic matrix, or as force nultipoles. Finally, some of the results Q)ailable on the interactions between point defects and other crystal defects are briefly reviewed. Although the material in the text covers mainly the mathematical theory of crystal defects, the author has been constantly concerned with emphasizing the phYSical significance of the results and some of their possible applications. The reader can easily enlarge his information in these directions by reference to the stan- dard books on crystal defects by Cottrell {84J, Read {275J, Friedel 124J, Kroner 190J, van Bueren {365J, Indenbom {167J, Nabarro {258J, Hirth and Lathe 162J, or to the review articles by Seeger 286 J, Eshelby {Ill J, de Wit 385 J, and Bullough 50].

Автор: D. Walgraef
Название: Patterns, Defects and Microstructures in Nonequilibrium Systems
ISBN: 9401080925 ISBN-13(EAN): 9789401080927
Издательство: Springer
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Цена: 39970.00 р.
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Описание: Proceedings of the NATO Advanced Research Workshop, Austin, Texas, USA, March 24-28, 1986

Автор: Balluffi Robert W
Название: Introduction To Elasticity Theory For Crystal Defects (Second Edition)
ISBN: 9814749710 ISBN-13(EAN): 9789814749718
Издательство: World Scientific Publishing
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Цена: 15048.00 р.
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Описание: The book presents a unified and self-sufficient and reader-friendly introduction to the anisotropic elasticity theory necessary to model a wide range of point, line, planar and volume type crystal defects (e.g., vacancies, dislocations, interfaces, inhomogeneities and inclusions).

Автор: Holt
Название: Extended Defects in Semiconductors
ISBN: 1107424143 ISBN-13(EAN): 9781107424142
Издательство: Cambridge Academ
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Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.