Описание: This book serves as a hands-on guide to RF tunable devices, circuits and subsystems. An innovative of modeling for tunable devices and networks is described, along with a new tuning algorithm, adaptive matching network control approach, and novel filter frequency automatic control loop.
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9401781400 ISBN-13(EAN): 9789401781404 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Описание: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9400767986 ISBN-13(EAN): 9789400767980 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Описание: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts.
Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
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